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ISL6753 Datasheet(PDF) 7 Page - Intersil Corporation |
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ISL6753 Datasheet(HTML) 7 Page - Intersil Corporation |
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7 / 15 page  7 FN9182.1 March 10, 2005 Pin Descriptions VDD - VDD is the power connection for the IC. To optimize noise immunity, bypass VDD to GND with a ceramic capacitor as close to the VDD and GND pins as possible. Supply voltage under-voltage lock-out (UVLO) start and stop thresholds track each other resulting in relatively constant hysteresis. GND - Signal and power ground connections for this device. Due to high peak currents and high frequency operation, a low impedance layout is necessary. Ground planes and short traces are highly recommended. VREF - The 5.00V reference voltage output having 3% tolerance over line, load and operating temperature. Bypass to GND with a 0.1 µF to 2.2µF low ESR capacitor. CT - The oscillator timing capacitor is connected between this pin and GND. It is charged through an internal 200 µA current source and discharged with a user adjustable current source controlled by RTD. RTD - This is the oscillator timing capacitor discharge current control pin. The current flowing in a resistor connected between this pin and GND determines the magnitude of the current that discharges CT. The CT discharge current is nominally 20x the resistor current. The PWM deadtime is determined by the timing capacitor discharge duration. The voltage at RTD is nominally 2.00V. CS - This is the input to the overcurrent comparator. The overcurrent comparator threshold is set at 1.00V nominal. The CS pin is shorted to GND at the termination of either PWM output. Depending on the current sensing source impedance, a series input resistor may be required due to the delay between the internal clock and the external power switch. This delay may result in CS being discharged prior to the power switching device being turned off. RAMP - This is the input for the sawtooth waveform for the PWM comparator. The RAMP pin is shorted to GND at the termination of the PWM signal. A sawtooth voltage Typical Performance Curves FIGURE 1. REFERENCE VOLTAGE vs TEMPERATURE FIGURE 2. CT DISCHARGE CURRENT GAIN vs RTD CURRENT FIGURE 3. DEADTIME (DT) vs CAPACITANCE FIGURE 4. CAPACITANCE vs FREQUENCY 40 25 10 5 2035 5065 8095 110 0.98 0.99 1 1.01 1.02 Temperature (C) 0 200 400 600 800 1000 18 19 20 21 22 23 24 25 RTD Current (uA) 0 1020 3040 5060 7080 90 100 10 100 1 .10 3 1 .10 4 RTD (kohms) CT = 1000pF 680pF 470pF 330pF 220pF 100pF 0.1 1 10 10 100 1 .10 3 CT (nF) RTD= 10kΩ 50kΩ 100kΩ ISL6753 |
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