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ST7LITE3 Datasheet(PDF) 141 Page - STMicroelectronics

Part # ST7LITE3
Description  8-BIT MCU WITH SINGLE VOLTAGE FLASH, DATA EEPROM, ADC, TIMERS, SPI, LINSCI
PDF  167 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

ST7LITE3 Datasheet(HTML) 141 Page - STMicroelectronics

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13.6 MEMORY CHARACTERISTICS
TA = -40°C to 85°C, unless otherwise specified
13.6.1 RAM and Hardware Registers
13.6.2 FLASH Program Memory
13.6.3 EEPROM Data Memory
Notes:
1. Minimum VDD supply voltage without losing data stored in RAM (in HALT mode or under RESET) or in hardware reg-
isters (only in HALT mode). Guaranteed by construction, not tested in production.
2. Up to 32 bytes can be programmed at a time.
3. The data retention time increases when the TA decreases.
4. Data based on reliability test results and monitored in production.
5. Data based on characterization results, not tested in production.
6. Guaranteed by Design. Not tested in production.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRM
Data retention mode 1)
HALT mode (or RESET)
1.6
V
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDD
Operating voltage for Flash write/erase
Refer to operating range
of VDD with TA, section
13.3.1 on page 131
2.7
5.5
V
tprog
Programming time for 1~32 bytes 2)
TA=−40 to +85°C
5
10
ms
Programming time for 1.5 kBytes
TA=+25°C
0.24
0.48
s
tRET
Data retention 4)
TA=+55°C
3)
20
years
NRW
Write erase cycles
TA=+25°C
10K
cycles
IDD
Supply current
Read / Write / Erase
modes
fCPU = 8MHz, VDD = 5.5V
2.6 6)
mA
No Read/No Write Mode
100
µA
Power down mode / HALT
0
0.1
µA
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDD
Operating voltage for EEPROM write/erase
Refer to operating range
of VDD with TA, section
13.3.1 on page 131
2.7
5.5
V
tprog
Programming time for 1~32 bytes
TA=−40 to +85°C
5
10
ms
tret
Data retention 4)
TA=+55°C
3)
20
years
NRW
Write erase cycles
TA=+25°C
300K
cycles



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