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E3743FCH Datasheet(PDF) 4 Page - Harvatek Corporation |
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E3743FCH Datasheet(HTML) 4 Page - Harvatek Corporation |
4 / 15 page ![]() Top Mount Chip LED E3743FCH-20D-0001H2 7 Official Product HT Part No. E3743FCH-20D-0001H2 Tentative Product **************** **************** Specifications are subject to changes for improvement without advance notice. Proprietary data, drawings, company confidential all rights reserved. 03/02/2017 Version 1.3 Page 4/15 Product Specifications Item Specification Material Quantity Luminous Intensity(Iv) USD:45.0-285.0 mcd NG :112.5-360.0 mcd NB :28.5-180.0 mcd @20mA/ Ts= 25℃;Tolerance: + 10% Wavelength USD:615.0-630.0 nm NG :515.0-535.0 nm NB :460.0-480.0 nm @20mA/ TS= 25℃;Tolerance: + 0.5nm Vf USD :1.6-2.4 V NG :2.7-3.9 V NB :2.7-3.9 V @20mA/ TS= 25℃ ;Tolerance: + 0.05V Ir < 10 µA @ VR = 5 V Resin Diffused Epoxy Carrier tape EIA 481-1A specs Conductive black tape Reel EIA 481-1A specs Conductive black Label HT standard Paper Packing bag 220x240mm Aluminum laminated bag/ no-zipper One reel per bag Carton HT standard Paper Non-specified Others: Each immediate box consists of 5 reels. The 5 reels may not necessarily have the same lot number or the same bin combinations of Iv, λD and Vf. Each reel has a label identifying its specification; the immediate box consists of a product label as well. Note :This is shipped test conditions ※Remarks: This product should be operated in forward bias. If a reverse voltage is continuously applied to the product, such operation can cause migration resulting in LED damage. ATTENTION: Electrostatic Discharge (ESD) protection The symbol to the left denotes that ESD precaution is needed. ESD protection for GaP and AlGaAs based chips is necessary even though they are relatively safe in the presence of low static-electric discharge. Parts built with AlInGaP, GaN, or/and InGaN based chips are STATIC SENSITIVE devices. ESD precaution must be taken during design and assembly. If manual work or processing is needed, please ensure the device is adequately protected from ESD during the process. |
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