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SC101161DT Datasheet(PDF) 114 Page - Freescale Semiconductor, Inc |
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SC101161DT Datasheet(HTML) 114 Page - Freescale Semiconductor, Inc |
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114 / 142 page ![]() Device User Guide — 9S12DT128DGV2/D V02.15 114 Freescale Semiconductor Table A-12 NVM Reliability Characteristics1 NOTES: 1. TJavg will not exeed 85°C considering a typical temperature profile over the lifetime of a consumer, industrial or automotive application. Conditions are shown in (Table A-4) unless otherwise noted Num C Rating Symbol Min Typ Max Unit Flash Reliability Characteristics 1 C Data retention after 10,000 program/erase cycles at an average junction temperature of TJavg ≤ 85°C tFLRET 15 1002 2. Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated to 25 °C using the Arrhenius equation. For additional information on how Freescale defines Typical Data Retention, please refer to Engineering Bulletin EB618. — Years 2 C Data retention with <100 program/erase cycles at an average junction temperature TJavg ≤ 85°C 20 1002 — 3 C Number of program/erase cycles (–40 °C ≤ T J ≤ 0°C) nFL 10,000 — — Cycles 4 C Number of program/erase cycles (0 °C ≤ T J ≤ 140°C) 10,000 100,0003 3. Spec table quotes typical endurance evaluated at 25 °C for this product family, typical endurance at various temperature can be estimated using the graph below. For additional information on how Freescale defines Typical Endurance, please refer to Engineering Bulletin EB619. — EEPROM Reliability Characteristics 5 C Data retention after up to 100,000 program/erase cycles at an average junction temperature of TJavg ≤ 85°C tEEPRET 15 1002 — Years 6 C Data retention with <100 program/erase cycles at an average junction temperature TJavg ≤ 85°C 20 1002 — 7 C Number of program/erase cycles (–40 °C ≤ T J ≤ 0°C) nEEP 10,000 — — Cycles 8 C Number of program/erase cycles (0 °C < T J ≤ 140°C) 100,000 300,0003 — |
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