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FEATURES
DESCRIPTION
APPLICATIONS
• High output power
• High reliability
• Medium emission angle
SYMBOL PARAMETER
MIN
MAX
UNITS
Pd
Power Dissipation
360
mW
If
Continuous Forward Current
180
mA
Ip
Peak Forward Current
3.0
A
Vr
Reverse Voltage
3
V
TSTG
Storage Temperature
-55
+125
°C
TO
Operating Temperature
-55
+125
°C
TS
Soldering Temperature*
+240
°C
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Po
Output Power
If = 100 mA
7.0
15
mW
Vf
Forward Voltage
If = 100 mA
1.5
1.9
V
Ir
Reverse current
Vr = -3V
10
uA
lp
Peak Wavelength
If = 50 mA
865
880
895
nm
Δl
Spectral Halfwidth
If = 50 mA
80
nm
Rd
Dynamic Resistance
If = 100mA
1.2
Ohms
tr
Rise Time
If = 20 mA
0.6
uS
tf
Fall Time
If = 20 mA
0.5
uS
C
L
L
C
C
L
C
L
ANODE & CASE
HEADER
880 nm LED CHIP
WINDOW CAP
(WELDED)
Ø.207 [5.3]
.019 [0.48]
CATHODE
.035 [0.9]
.047 [1.2]
.030 [0.8]
.045 [1.1]
Ø.180 [4.6]
45°
Ø.188 [4.8]
Ø.215 [5.5]
Ø.019 [0.5] TYP
2X 1.000 [25.4]
.015 [0.38] MAX
.028 [0.7] MAX
.192 [4.9]
.214 [5.4]
.223 [5.7]
.257 [6.5]
.100 [2.54]
CATHODE
GaAlAs High power IR LED Emitters
PDI-E813
PACKAGE DIMENSIONS INCH [mm]
TO-46 CAN PACKAGE
The PDI-E813 is a high power GaAlAs infrared
emitter, packaged in a hermetic TO-46 metal header
with a dome window glass.
• Photoelectric switches
• Infrared sources
• Optical readers
* 1/16 inch from case for 3 seconds max.
ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are
subject to change without notice.
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com
ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED
CHIP DIMENSIONS INCH [mm]
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