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H838532H Datasheet(PDF) 167 Page - Renesas Technology Corp |
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H838532H Datasheet(HTML) 167 Page - Renesas Technology Corp |
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167 / 508 page ![]() Section 6 ROM Rev. 1.00 May 30, 2008 Page 147 of 484 REJ09B0436-0100 Table 6.11 AC Characteristics in Transition from Memory Read Mode to Another Mode Conditions: V CC = 3.3 V ±0.3 V, VSS = 0 V, Ta = 25°C ±5°C Item Symbol Min Max Unit Notes Command write cycle t nxtc 20 — µs Figure 6.8 CE hold time t ceh 0 — ns CE setup time t ces 0 — ns Data hold time t dh 50 — ns Data setup time t ds 50 — ns Write pulse width t wep 70 — ns WE rise time t r — 30 ns WE fall time t f — 30 ns CE A15 −A0 OE WE I/O7 −I/O0 Note: Do not enable WE and OE at the same time. tceh twep tf tr tces tnxtc Address stable tds tdh Other mode command write Memory read mode Figure 6.8 Timing Waveforms in Transition from Memory Read Mode to Another Mode |
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