HD6432142 datasheet(753/1177 Pages) RENESAS

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Section 23 ROM (H8S/2148 F-ZTAT A-Mask Version, H8S/2147 F-ZTAT A-Mask Version, H8S/2144 F-ZTAT A-Mask Version)

Rev. 4.00 Sep 27, 2006 page 709 of 1130

REJ09B0327-0400

program setting so that the time for one programming operation is within the range of (z1), (z2) or

(z3) µs.

23.7.2

Program-Verify Mode

In program-verify mode, the data written in program mode is read to check whether it has been

correctly written in the flash memory.

After the elapse of a given programming time, the programming mode is exited (the P bit in

FLMCR1 is cleared, then the PSU bit in FLMCR2 is cleared at least (

α) µs later). The watchdog

timer is cleared after the elapse of (

β) µs or more, and the operating mode is switched to program-

verify mode by setting the PV bit in FLMCR1. Before reading in program-verify mode, a dummy

write of H'FF data should be made to the addresses to be read. The dummy write should be

executed after the elapse of (

γ) µs or more. When the flash memory is read in this state (verify data

is read in 16-bit units), the data at the latched address is read. Wait at least (

ε) µs after the dummy

write before performing this read operation. Next, the originally written data is compared with the

verify data, and reprogram data is computed (see figure 23.12) and transferred to the reprogram

data area. After 128 bytes of data have been verified, exit program-verify mode, wait for at least

(

η) µs. If the programming count is less than 6, the 128-byte data in the additional program data

area should be written consecutively to the write addresses, and additional programming

performed. Next clear the SWE bit in FLMCR1, and wait at least (

θ) µs. If reprogramming is

necessary, set program mode again, and repeat the program/program-verify sequence as before.

However, ensure that the program/program-verify sequence is not repeated more than (N) times on

the same bits.

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