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HD6432142 Datasheet(PDF) 877 Page - Renesas Technology Corp |
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HD6432142 Datasheet(HTML) 877 Page - Renesas Technology Corp |
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877 / 1177 page ![]() Section 26 Electrical Characteristics Rev. 4.00 Sep 27, 2006 page 833 of 1130 REJ09B0327-0400 Table 26.29 Flash Memory Characteristics (Programming/erasing operating range) Conditions (5 V version): V CC = 4.0 V to 5.5 V, VSS = 0 V, Ta = –20 to +75°C (regular specifications), T a = –40 to +85°C (wide-range specifications) (3 V version): V CC = 3.0 V to 3.6V, VSS = 0 V, Ta = –20 to 75°C Item Symbol Min Typ Max Unit Test Condition Programming time* 1 *2 *4 tP — 10 200 ms/ 128 bytes Erase time* 1 *3 *6 tE — 100 1200 ms/ block Reprogramming count N WEC 100* 8 10000* 9 —Times Data retention time* 10 t DRP 10 — — Years Programming Wait time after SWE-bit setting* 1 x1 — — µs Wait time after PSU-bit setting* 1 y50 — — µs z1 28 30 32 µs 1 ≤ n ≤ 6 Wait time after P-bit setting* 1 *4 z2 198 200 202 µs 7 ≤ n ≤ 1000 z3 8 10 12 µs Additional writing Wait time after P-bit clear* 1 α 5— — µs Wait time after PSU-bit clear* 1 β 5— — µs Wait time after PV-bit setting* 1 γ 4— — µs Wait time after dummy write* 1 ε 2— — µs Wait time after PV-bit clear* 1 η 2— — µs Wait time after SWE-bit clear* 1 θ 100 — — µs Maximum programming count* 1 *4 *5 N — — 1000 Times Erase Wait time after SWE-bit setting* 1 x1 — — µs Wait time after ESU-bit setting* 1 y 100 — — µs Wait time after E-bit setting* 1 *6 z 10 — 100 ms Wait time after E-bit clear* 1 α 10 — — µs Wait time after ESU-bit clear* 1 β 10 — — µs Wait time after EV-bit setting* 1 γ 20 — — µs Wait time after H'FF dummy write* 1 ε 2— — µs Wait time after EV-bit clear* 1 η 4— — µs Wait time after SWE-bit clear* 1 θ 100 — — µs Maximum erase count* 1 *6 *7 N — — 120 Times |
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