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171282 Datasheet(PDF) 1 Page - OSA Opto Light GmbH |
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171282 Datasheet(HTML) 1 Page - OSA Opto Light GmbH |
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1 / 1 page ![]() © 2004 OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 contact@osa-opto.com YELLOW Item No.: 171282 1. This specification applies to AlInGaP / GaAs LED Chips 2. Structure 2.1 Mesa structure 2.2 Electrodes p-side (anode) Au alloy or Al n-side (cathode) Au alloy 3. Outlines (dimensions in microns) Chip thickness could also be 180 m or 210 m Wire bond contacts can also be square 4. Electrical and optical characteristics (T=25°C) Parameter Symbol Conditions min typ max Unit Forward voltage VF IF = 20 mA 2,10 2,40 V Reverse current IR VR = 5 V 10 µA Luminous intensity * IV IF = 10 mA 55 mcd dom. wavelength λ D IF = 20 mA 580 nm * On request, wafers will be delivered according to luminous intensity classes Brightness measurement at OSA on gold plate 5. Packing Dice on adhesive film with 1) wire bond side on top 2) back contact on top 6. Labeling Type Lot No. IV typ Quantity min max p-Electrode 250 Epitaxy AlInGaP n-Substrate GaAs n-Electrode 235 235 110 |
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