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OSA Opto Light GmbH — Tel. +49-(0)30-65 76 26 83 — Fax +49-(0)30-65 76 26 81 — contact@osa-opto.com

RED

Item No.: 194272

1.

This specification applies to AlInGaP / GaAs LED Chips

2.

Structure

2.1

Mesa structure

2.2

Electrodes

p-side (anode)

Au alloy or Al

n-side (cathode)

Au alloy

3.

Outlines (dimensions in microns)

4.

Electrical and optical characteristics (T=25°C)

Parameter

Symbol

Conditions

min

typ

max

Unit

Forward voltage

2,10

2,40

V

Reverse current

10

µA

Luminous intensity *

11,0

mcd

dom. wavelength

λ

D

640

nm

* On request, wafers will be delivered according to luminous intensity classes

Brightness measurement at OSA on gold plate

5.

Packing

Dice on adhesive film with 1) wire bond side on top

2) back contact on top

6.

Labeling

Type

Lot No.

Quantity

min

max

p-Electrode

250

Epitaxy AlInGaP

n-Substrate GaAs

n-Electrode

235

235

110