R32C152 datasheet(101/133 Pages) RENESAS

101 / 133 page

REJ03B0231-0102 Rev.1.02 Nov 30, 2009

Page 101 of 130

R32C/152 Group

5. Electrical Characteristics

Notes:

Program/erase definition

This value represents the number of erasure per block.

If the flash memory is programmed/erased n times, each block can be erased n times.

i.e. If a word write is performed in different 16 addresses in a block and then the block is erased, it

is considered the programming/erasure is performed just once. However a write in the same

address more than once for one erasure is disabled. (overwrite disabled).

The data retention time includes the periods when the supply voltage is not applied and no clock is

provided.

This data retention includes 3000 hours in Ta = 125°C and 7000 hours in Ta = 85°C.

Please contact a Renesas sales office regarding data retention time other than the above.

Figure 5.3

Power Supply Circuit Timing

Table 5.9

E2dataFlash Electrical Characteristics

(VCC = 3.0 to 5.5 V, VSS =0V, and Ta =Topr, unless otherwise noted)

Symbol

Characteristic

Value

Unit

Min.

Typ.

Max.

—

Programming and erasure endurance of flash memory (1) 100000

times

—

Word program time

100

2000

µs

—

Block erasure time

32 byte block

200

tPS

Flash memory circuit start-up stabilization time

µs

—

Data retention (2)

Ta = 55°C (3, 4)

years

Table 5.10

Power Supply Circuit Timing Characteristics

(VCC = 3.0 to 5.5 V, VSS = 0 V, and Ta =Topr, unless otherwise noted)

Symbol

Characteristic

Measurement

condition

Value

Unit

Min. Typ. Max.

td(P-R)

Internal power supply start-up stabilization

time after the main power supply is turned on

2ms

t d(P-R)

VCC

PLL oscillator-

output waveform

Internal power supply start-up

stabilization time after the main

power supply is turned on

Recommended

operating voltage

t d(P-R)

Supply voltage for

internal logic

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