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ATmega328P Datasheet(PDF) 301 Page - ATMEL Corporation |
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ATmega328P Datasheet(HTML) 301 Page - ATMEL Corporation |
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301 / 345 page  301 7810A–AVR–11/09 ATmega328P [Preliminary] If polling (RDY/BSY) is not used, the used must wait at least t WD_EEPROM before issuing the next byte (See Table 27-16). In a chip erased device, no 0xFF in the data file(s) need to be programmed. 6. Any memory location can be verified by using the Read instruction which returns the con- tent at the selected address at serial output MISO. 7. At the end of the programming session, RESET can be set high to commence normal operation. 8. Power-off sequence (if needed): Set RESET to “1”. Turn V CC power off. 27.8.3 Serial Programming Instruction set Table 27-17 on page 301 and Figure 27-8 on page 303 describes the Instruction set. Table 27-16. Typical Wait Delay Before Writing the Next Flash or EEPROM Location Symbol Minimum Wait Delay t WD_FLASH 4.5 ms tWD_EEPROM 3.6 ms t WD_ERASE 9.0 ms Table 27-17. Serial Programming Instruction Set (Hexadecimal values) Instruction/Operation Instruction Format Byte 1 Byte 2 Byte 3 Byte4 Programming Enable $AC $53 $00 $00 Chip Erase (Program Memory/EEPROM) $AC $80 $00 $00 Poll RDY/BSY $F0 $00 $00 data byte out Load Instructions Load Extended Address byte(1) $4D $00 Extended adr $00 Load Program Memory Page, High byte $48 $00 adr LSB high data byte in Load Program Memory Page, Low byte $40 $00 adr LSB low data byte in Load EEPROM Memory Page (page access) $C1 $00 0000 000aa data byte in Read Instructions Read Program Memory, High byte $28 adr MSB adr LSB high data byte out Read Program Memory, Low byte $20 adr MSB adr LSB low data byte out Read EEPROM Memory $A0 0000 00aa aaaa aaaa data byte out Read Lock bits $58 $00 $00 data byte out Read Signature Byte $30 $00 0000 000aa data byte out Read Fuse bits $50 $00 $00 data byte out Read Fuse High bits $58 $08 $00 data byte out Read Extended Fuse Bits $50 $08 $00 data byte out |
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