UT2274

Preliminary

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R213-019.d

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

1400

V

Collector-Emitter Voltage

720

V

Emitter-Base Voltage

5

V

DC

1

A

Collector Current

Pulse (Note 2)

2

A

TO-251

1

W

Collector Dissipation

TO-92

625

mW

Junction Temperature

150

°C

Storage Temperature

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. PW≤300μs, duty cycle≤10%

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector-Base Breakdown Voltage

1400

V

Collector-Emitter Breakdown Voltage

720

V

Emitter-Base Breakdown Voltage

5

V

Collector Cut-off Current

10

μA

Collector Cut-off Current

1

mA

Emitter Cut-off Current

1

mA

Collector-Emitter Saturation Voltage

1.5

V

Base-Emitter Saturation Voltage

1.5

V

15

35

DC Current Gain

4

Storage Time

1.5

3.0

μs

Fall Time

0.25

0.4

μs