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TVP06B6V8-G Datasheet(PDF) 1 Page - Comchip Technology |
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TVP06B6V8-G Datasheet(HTML) 1 Page - Comchip Technology |
1 / 5 page ![]() SMD Transient Voltage Suppressor TVP06B6V8-G Thru. TVP06B601-G Breakdown Voltage: 6.8 ~ 600Volts Power Dissipation: 600 Watts RoHS Device Features -Glass passivated chip. -Low leakage. -Uni and Bidirectional unit. -Excellent clamping capability. -Very fast response time. Mechanical Data -Case: Molded plastic, . JEDEC SMB/DO-214AA -Terminals: solderable per MIL-STD-750, method 2026 -Polarity: Cathode band denoted. 0.087(2.20) 0.077(1.96) 0.155(3.94) 0.130(3.30) 0.191(4.85) 0.171(4.35) 0.012(0.30) 0.006(0.15) 0.096(2.44) 0.084(2.13) 0.060(1.52) 0.030(0.75) 0.008(0.20) 0.001(0.02) 0.216(5.50) 0.201(5.10) Dimensions in inches and (millimeter) SMB/DO-214AA Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristics Symbol Value Units Peak power dissipation on 10/1000μS waveform (Note 1 ) Peak pulse current on 10/1000μS waveform (Note 1) O Steady state power dissipation at TL=75 C Peak forward surge current, 8.3mS single half sine-wave uni-directional only (Note 2) Maximum instantaneous forward voltage at 25.0A for uni-directional only (Note 3) Operation junction temperature Storage temperature range PPP IPP PD IFSM VF TJ TSTG 600 See Next Table 5.0 100 3.5/5.0 -55 to +150 W A W A V OC OC QW-BTV18 Note: O 1. Non-repetitive current pulse, per Fig. 5 and derated above TA=25 C per Fig.1 2. Measured on 8.3 mS single half sine-wave or equivalent square wave, duty cycle=4 pulse per minute maximum. 3. VF<3.5V for devices of VBR <200V and VF <5.0V for devices of VBR >201V Page 1 REV:A -RoHS compliant. -Epoxy: UL 94V-0 rate flame retardant. -55 to +150 -Approx. weight: 0.108 grams |
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