PIC16F84A datasheet(163/337 Pages) MICROCHIP

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DS30234D-page 163

PIC16C6X

Applicable Devices 61 62 62A R62 63 R63 64 64A R64 65 65A R65 66 67

16.0

ELECTRICAL CHARACTERISTICS FOR PIC16C61

Absolute Maximum Ratings †

Ambient temperature under bias............................................................................................................. .-55˚C to +125˚C

Storage temperature ............................................................................................................................... -65˚C to +150˚C

Voltage on any pin with respect to VSS (except VDD, MCLR, and RA4) .......................................... -0.3V to (VDD + 0.3V)

Voltage on VDD with respect to VSS .......................................................................................................... -0.3V to +7.5V

Voltage on MCLR with respect to VSS (Note 2) .............................................................................................. 0V to +14V

Voltage on RA4 pin with respect to Vss ........................................................................................................... 0V to +14V

Total power dissipation (Note 1)............................................................................................................................800 mW

Maximum current out of VSS pin ............................................................................................................................150 mA

Maximum current into VDD pin ...............................................................................................................................100 mA

Input clamp current, IIK (VI < 0 or VI > VDD)

.....................................................................................................................± 20 mA

Output clamp current, IOK (VO < 0 or VO > VDD)

..............................................................................................................± 20 mA

Maximum output current sunk by any I/O pin...........................................................................................................25 mA

Maximum output current sourced by any I/O pin .....................................................................................................20 mA

Maximum current sunk by PORTA ...........................................................................................................................80 mA

Maximum current sourced by PORTA ......................................................................................................................50 mA

Maximum current sunk by PORTB.........................................................................................................................150 mA

Maximum current sourced by PORTB ...................................................................................................................100 mA

Note 1: Power dissipation is calculated as follows: Pdis = VDD x {IDD -

∑ IOH} + ∑ {(VDD-VOH) x IOH} + ∑(VOl x IOL)

Note 2: Voltage spikes below VSS at the MCLR pin, inducing currents greater than 80 mA, may cause latch-up. Thus,

a series resistor of 50-100

Ω should be used when applying a “low” level to the MCLR pin rather than pulling

this pin directly to VSS.

TABLE 16-1:

CROSS REFERENCE OF DEVICE SPECS FOR OSCILLATOR CONFIGURATIONS

AND FREQUENCIES OF OPERATION (COMMERCIAL DEVICES)

† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at those or any other conditions above those

indicated in the operation listings of this speciﬁcation is not implied. Exposure to maximum rating conditions for

extended periods may affect device reliability.

OSC

PIC16C61-04

PIC16C61-20

PIC16LC61-04

JW Devices

VDD: 4.0V to 6.0V

IDD:

3.3 mA max. at 5.5V

IPD:

µA max. at 4V

Freq: 4 MHz max.

VDD: 4.5V to 5.5V

IDD:

1.8 mA typ. at 5.5V

IPD:

1.0

µA typ. at 4V

Freq: 4 MHz max.

VDD: 3.0V to 6.0V

IDD:

1.4 mA typ. at 3.0V

IPD:

0.6

µA typ. at 3V

Freq: 4 MHz max.

VDD: 4.0V to 6.0V

IDD:

3.3 mA max. at 5.5V

IPD:

µA max. at 4V

Freq: 4 MHz max.

VDD: 4.0V to 6.0V

IDD:

3.3 mA max. at 5.5V

IPD:

µA max. at 4V

Freq: 4 MHz max.

VDD: 4.5V to 5.5V

IDD:

1.8 mA typ. at 5.5V

IPD:

1.0

µA typ. at 4V

Freq: 4 MHz max.

VDD: 3.0V to 6.0V

IDD:

1.4 mA typ. at 3.0V

IPD:

0.6

µA typ. at 3V

Freq: 4 MHz max.

VDD: 4.0V to 6.0V

IDD:

3.3 mA max. at 5.5V

IPD:

µA max. at 4V

Freq: 4 MHz max.

VDD: 4.5V to 5.5V

Not recommended for use in

HS mode

VDD: 4.5V to 5.5V

IDD:

13.5 mA typ. at 5.5V

IDD:

30 mA max. at 5.5V

IDD:

30 mA max. at 5.5V

IPD:

1.0

µA typ. at 4.5V

IPD:

1.0

µA typ. at 4.5V

IPD:

1.0

µA typ. at 4.5V

Freq: 4 MHz max.

Freq: 20 MHz max.

VDD: 4.0V to 6.0V

IDD:

µA typ. at 32 kHz,

4.0V

IPD:

0.6

µA typ. at 4.0V

Freq: 200 kHz max.

Not recommended for

use in LP mode

VDD: 3.0V to 6.0V

IDD:

µA max. at 32 kHz,

3.0V

IPD:

µA max. at 3.0V

Freq: 200 kHz max.

VDD: 3.0V to 6.0V

IDD:

µA max. at 32 kHz,

3.0V

IPD:

µA max. at 3.0V

Freq: 200 kHz max.

The shaded sections indicate oscillator selections which are tested for functionality, but not for MIN/MAX speciﬁcations.

It is recommended that the user select the device type that ensures the speciﬁcations required.

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