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LM7332 Datasheet(PDF) 7 Page - Texas Instruments |
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LM7332 Datasheet(HTML) 7 Page - Texas Instruments |
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7 / 34 page  LM7332 www.ti.com SNOSAV4B – APRIL 2008 – REVISED JANUARY 2016 ±5-V Electrical Characteristics (continued) Unless otherwise specified, all limits are ensured for TA = 25°C, V + = +5 V, V− = −5 V, V CM = 0 V, VO = 0 V, and RL > 1 MΩ to 0 V. (1) PARAMETER TEST CONDITIONS MIN (2) TYP (3) MAX (2) UNIT RL = 10 kΩ to 0 V 75 250 VID = 100 mV At the temperature extremes 300 Output swing high RL = 2 kΩ to 0 V 125 350 VID = 100 mV At the temperature extremes 400 mV from VO either rail RL = 10 kΩ to 0 V 10 250 VID = −100 mV At the temperature extremes 300 Output swing low RL = 2 kΩ to 0V 30 350 VID = −100 mV At the temperature extremes 400 Sourcing from V+, VID = 200 mV (6) 90 120 ISC Output short circuit current mA Sinking to V−, VID = −200 mV (6) 90 100 IOUT Output current VID = ±200 mV, VO = 1 V from rails ±65 mA No Load, VCM = −4.5 V 1.5 2.4 IS Total supply current mA At the temperature extremes 2.6 AV = +1, VI = 8-V step, RL = 1 MΩ, SR Slew rate(7) 13.2 V/µs CL = 10 pF ROUT Close-loop output resistance AV = +1, f = 100 kHz 3 Ω fu Unity-gain frequency RL = 10 MΩ, CL = 20 pF 7.9 MHz GBWP Gain bandwidth product f = 50 kHz 19.9 MHz en Input-referred voltage noise f = 2 kHz 14.7 nV/ √HZ in Input-referred current noise f = 2 kHz 1.3 pA/ √HZ AV = +2, RL = 100 kΩ, f = 1 kHz THD+N Total harmonic distortion + noise −87 dB VO = 8 VPP CT Rej. Crosstalk rejection f = 3 MHz, driver RL = 10 kΩ 68 dB (6) Short-circuit test is a momentary test. Output short circuit duration is infinite for VS ≤ 6 V at room temperature and below. For VS > 6 V, allowable short circuit duration is 1.5 ms. (7) Slew rate is the slower of the rising and falling slew rates. Connected as a voltage follower. 6.7 ±15-V Electrical Characteristics Unless otherwise specified, all limits are ensured for TA = 25°C, V + = +15 V, V− = −15 V, V CM = 0 V, VO = 0 V, and RL > 1 MΩ to 0 V. (1) PARAMETER TEST CONDITIONS MIN (2) TYP (3) MAX (2) UNIT VCM = −14.5 V and VCM = 14.5 V −5 ±2 5 VOS Input offset voltage mV At the temperature extremes −6 6 Input offset voltage temperature VCM = −14.5 V and VCM = 14.5 V TC VOS ±2 µV/°C drift (4) See (5) −2 ±1 2 IB Input bias current µA At the temperature extremes −2.5 2.5 (1) Electrical Characteristics values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. No ensured specification of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ > TA. (2) All limits are ensured by testing or statistical analysis. (3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped production material. (4) Offset voltage temperature drift determined by dividing the change in VOS at temperature extremes into the total temperature change. (5) Positive current corresponds to current flowing in the device. Copyright © 2008–2016, Texas Instruments Incorporated Submit Documentation Feedback 7 Product Folder Links: LM7332 |
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