STM32F446ME datasheet(107/201 Pages) STMICROELECTRONICS

107 / 201 page

DocID027107 Rev 5

107/201

STM32F446xC/E

Electrical characteristics

174

Figure 27. LACCHSI versus temperature

1. Guaranteed based on test during characterization.

Low-speed internal (LSI) RC oscillator

ACCHSI

Accuracy of the HSI

oscillator

User-trimmed with the RCC_CR

Factory-

calibrated

TA = –40 to 105 °C(3)

–8

4.5

TA = –10 to 85 °C(3)

–4

TA = 25 °C

–1

tsu(HSI)(2)

HSI oscillator

startup time

2.2

µs

IDD(HSI)(2)

HSI oscillator

power consumption

µA

1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified.

2. Guaranteed by design.

3. Guaranteed based on test during characterization.

Table 42. LSI oscillator characteristics (1)

1. VDD = 3 V, TA = –40 to 105 °C unless otherwise specified.

Symbol

Parameter

Min

Typ

Max

Unit

fLSI(2)

2. Guaranteed based on test during characterization..

Frequency

kHz

tsu(LSI)(3)

3. Guaranteed by design.

LSI oscillator startup time

µs

IDD(LSI)(3)

LSI oscillator power consumption

0.4

0.6

µA

Table 41. HSI oscillator characteristics (1)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

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