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IRF620A Datasheet(PDF) 3 Page - Inchange Semiconductor Company Limited |
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IRF620A Datasheet(HTML) 3 Page - Inchange Semiconductor Company Limited |
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3 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 3 isc N-Channel MOSFET Transistor IRF620A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 200 V VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 4 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=2.5A 0.8 Ω IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS= 200V; VGS= 0 VDS= 160V; VGS= 0; Tj= 125℃ 10 100 μA VSD Forward On-Voltage IS= 5A; VGS= 0 1.5 V Ciss Input Capacitance VDS=25V,VGS=0V, F=1.0MHz 360 pF Coss Output Capacitance 65 pF Crss Reverse Transfer Capacitance 30 pF ·SWITCHING CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT Td(on) Turn-on Delay Time VDD=100V,ID=5A RG=18Ω 30 ns Tr Rise Time 30 ns Td(off) Turn-off Delay Time 60 ns Tf Fall Time 40 ns · PDF pdfFactory Pro www.fineprint.cn |
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