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BD1754HFN Datasheet(PDF) 14 Page - Rohm |
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BD1754HFN Datasheet(HTML) 14 Page - Rohm |
14 / 21 page ![]() 14/17 BD1754HFN Datasheet TSZ02201-0G3G0C200060-1-2 10.Dec.2015 Rev.002 www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 Operational Notes – continued 11. Unused Input Pins Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and cause unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the power supply or ground line. 12. Regarding the Input Pin of the IC This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a parasitic diode or transistor. For example (refer to figure below): When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode. When GND > Pin B, the P-N junction operates as a parasitic transistor. Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be avoided. Figure 22. Example of monolithic IC structure N N P + P N N P + P Substrate GND N P + N N P + N P P Substrate GND GND Parasitic Elements Pin A Pin A Pin B Pin B B C E Parasitic Elements GND Parasitic Elements C B E Transistor (NPN) Resistor N Region close-by Parasitic Elements |
Similar Part No. - BD1754HFN_15 |
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Similar Description - BD1754HFN_15 |
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