STM32L475VC datasheet(156/193 Pages) STMICROELECTRONICS

156 / 193 page

Electrical characteristics

STM32L475xx

156/193

DocID027692 Rev 2

Rnetwork

R2/R1 internal

resistance

values in PGA

mode(5)

PGA Gain = 2

80/80

kΩ/kΩ

PGA Gain = 4

120/

PGA Gain = 8

140/

PGA Gain = 16

150/

Delta R

Resistance

variation (R1 or

R2)

--15

PGA gain error

-1

PGA BW

PGA bandwidth

for different non

inverting gain

Gain = 2

GBW/

MHz

Gain = 4

GBW/

Gain = 8

GBW/

Gain = 16

GBW/

Voltage noise

density

Normal mode

at 1 kHz, Output

loaded with 4 kΩ

-500

nV/√Hz

Low-power mode

at 1 kHz, Output

loaded with 20 kΩ

-600

Normal mode

at 10 kHz, Output

loaded with 4 kΩ

-180

Low-power mode

at 10 kHz, Output

loaded with 20 kΩ

-290

IDDA(OPAMP)(3)

OPAMP

consumption

from VDDA

Normal mode

no Load, quiescent

mode

120

260

µA

Low-power mode

100

1. Guaranteed by design, unless otherwise specified.

2. The temperature range is limited to 0 °C-125 °C when VDDA is below 2 V

3. Guaranteed by characterization results.

4. Mostly I/O leakage, when used in analog mode. Refer to Ilkg parameter in Table 59: I/O static characteristics.

5. R2 is the internal resistance between OPAMP output and OPAMP inverting input. R1 is the internal resistance between

OPAMP inverting input and ground. The PGA gain =1+R2/R1

Table 74. OPAMP characteristics(1) (continued)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

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