8S003F3P6 datasheet(65/104 Pages) STMICROELECTRONICS

Part #	8S003F3P6

Description	Extended instruction set

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STM8S003F3 STM8S003K3

Electrical characteristics

87

9.3.5

Memory characteristics

RAM and hardware registers

Flash program memory and data EEPROM

General conditions: TA = -40 to 85 °C.

Table 36. RAM and hardware registers

Symbol

Parameter

Conditions

Min

Unit

VRM

Data retention mode(1)

1. Minimum supply voltage without losing data stored in RAM (in halt mode or under reset) or in hardware

registers (only in halt mode). Guaranteed by design.

Halt mode (or reset)

VIT-max(2)

2. Refer to Table 20 on page 50 for the value of VIT-max.

V

Table 37. Flash program memory and data EEPROM

Symbol

Parameter

Conditions

Min(1)

1. Data based on characterization results.

Typ

Max

Unit

VDD

Operating voltage

(all modes, execution/write/erase)

fCPU ≤ 16 MHz

2.95

-

5.5

V

tprog

Standard programming time (including

erase) for byte/word/block

(1 byte/4 bytes/64 bytes)

--

6.0

6.6

ms

Fast programming time for 1 block (64

bytes)

--

3.0

3.3

ms

terase

Erase time for 1 block (64 bytes)

-

3.0

3.3

ms

NRW

Erase/write cycles(2)

(program memory)

2. The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a

write/erase operation addresses a single byte.

TA = 85 °C

100

-

cycles

Erase/write cycles(2)

(data memory)

100 k

-

tRET

Data retention (program memory)

after 100 erase/write cycles at

TA = 85 °C

TRET = 55° C

20

-

years

Data retention (data memory) after

10 k erase/write cycles at TA = 85 °C

20

-

Data retention (data memory) after

100 k erase/write cycles at TA = 85 °C

TRET = 85° C

1.0

-

IDD

Supply current (Flash programming or

erasing for 1 to 128 bytes)

--

2.0

-

mA

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