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8S003F3P6 Datasheet(PDF) 86 Page - STMicroelectronics |
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8S003F3P6 Datasheet(HTML) 86 Page - STMicroelectronics |
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86 / 104 page  Electrical characteristics STM8S003F3 STM8S003K3 86/104 DocID018576 Rev 9 Electromagnetic interference (EMI) Based on a simple application running on the product (toggling two LEDs through the I/O ports), the product is monitored in terms of emission. Emission tests conform to the IEC 61967-2 standard for test software, board layout and pin loading. Absolute maximum ratings (electrical sensitivity) Based on three different tests (ESD, DLU and LU) using specific measurement methods, the product is stressed in order to determine its performance in terms of electrical sensitivity. For more details, refer to the application note AN1181. Electrostatic discharge (ESD) Electrostatic discharges (one positive then one negative pulse separated by 1 second) are applied to the pins of each sample according to each pin combination. The sample size depends on the number of supply pins in the device (3 parts*(n+1) supply pin). One model can be simulated: the Human Body Model (HBM). This test conforms to the JESD22- A114A/A115A standard. For more details, refer to the application note AN1181. Table 49. EMI data Symbol Parameter Conditions Unit General conditions Monitored frequency band Max fHSE/fCPU(1) 1. Data based on characterization results. 16 MHz/ 8 MHz 16 MHz/ 16 MHz SEMI Peak level VDD = 5 V TA = 25 °C LQFP32 package conforming to IEC 61967-2 0.1 MHz to 30 MHz 5 5 dBµV 30 MHz to 130 MHz 4 5 130 MHz to 1 GHz 5 5 EMI level - 2.5 2.5 - Table 50. ESD absolute maximum ratings Symbol Ratings Conditions Class Maximum value(1) 1. Data based on characterization results. Unit VESD(HBM) Electrostatic discharge voltage (Human body model) TA = 25°C, conforming to JESD22-A114 A 4000 V VESD(CDM) Electrostatic discharge voltage (Charge device model) TA= 25°C, conforming to JESD22-C101 IV 1000 V |
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