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S3C72G9 Datasheet(PDF) 63 Page - Samsung semiconductor |
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S3C72G9 Datasheet(HTML) 63 Page - Samsung semiconductor |
63 / 96 page ![]() % LD (Continued) Description: Operand Binary Code Operation Notation RR,#imm 1 0 0 0 0 r2 r1 1 RR ← imm d7 d6 d5 d4 d3 d2 d1 d0 DA,A 1 0 0 0 1 0 0 1 DA ← A a7 a6 a5 a4 a3 a2 a1 a0 Ra,A 1 1 0 1 1 1 0 1 Ra ← A 0 0 0 0 0 r2 r1 r0 EA,@HL 1 1 0 1 1 1 0 0 A ← (HL), E ← (HL + 1) 0 0 0 0 1 0 0 0 EA,DA 1 1 0 0 1 1 1 0 A ← DA, E ← DA + 1 a7 a6 a5 a4 a3 a2 a1 a0 EA,RRb 1 1 0 1 1 1 0 0 EA ← RRb 1 1 1 1 0 r2 r1 0 @HL,A 1 1 0 0 0 1 0 0 (HL) ← A DA,EA 1 1 0 0 1 1 0 1 DA ← A, DA + 1 ← E a7 a6 a5 a4 a3 a2 a1 a0 RRb,EA 1 1 0 1 1 1 0 0 RRb ← EA 1 1 1 1 0 r2 r1 0 @HL,EA 1 1 0 1 1 1 0 0 (HL) ← A, (HL + 1) ← E 0 0 0 0 0 0 0 0 Examples: 1. RAM location 30H contains the value 4H. The RAM location values are 40H, 41H and 0AH, 3H respectively. The following instruction sequence leaves the value 40H in point pair HL, 0AH in the accumulator and in RAM location 40H, and 3H in register E. LD HL,#30H ; HL ← 30H LD A,@HL ; A ← 4H LD HL,#40H ; HL ← 40H LD EA,@HL ; A ← 0AH, E ← 3H LD @HL,A ; RAM (40H) ← 0AH |
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