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S3C72G9 Datasheet(PDF) 64 Page - Samsung semiconductor

Part # S3C72G9
Description  SAM47 INSTRUCTION SET
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

S3C72G9 Datasheet(HTML) 64 Page - Samsung semiconductor

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%
LD
(Continued)
Examples:
2. If an instruction such as LD A,#im (LD EA,#imm) or LD HL,#imm is written more than two
times in succession, only the first LD is executed; the next instructions are treated as NOPs.
Here are two examples of this 'redundancy effect':
LD
A,#1H
; A
← 1H
LD
EA,#2H
; NOP
LD
A,#3H
; NOP
LD
23H,A
; (23H)
← 1H
LD
HL,#10H
; HL
← 10H
LD
HL,#20H
; NOP
LD
A,#3H
; A
← 3H
LD
EA,#35
; NOP
LD
@HL,A
; (10H)
← 3H
The following table contains descriptions of special characteristics of the LD instruction when used
in different addressing modes:
Instruction
Operation Description and Guidelines
LD A,#im
Since the 'redundancy effect' occurs with instructions like LD EA,#imm, if this
instruction is used consecutively, the second and additional instructions of the
same type will be treated like NOPs.
LD A,@RRa
Load the data memory contents pointed to by 8-bit RRa register pairs (HL, WX,
WL) to the A register.
LD A,DA
Load direct data memory contents to the A register.
LD A,Ra
Load 4-bit register Ra (E, L, H, X, W, Z, Y) to the A register.
LD Ra,#im
Load 4-bit immediate data into the Ra register (E, L, H, X, W, Y, Z).
LD RR,#imm Load 8-bit immediate data into the Ra register (EA, HL, WX, YZ). There is a
redundancy effect if the operation addresses the HL or EA registers.
LD DA,A
Load contents of register A to direct data memory address.
LD Ra,A
Load contents of register A to 4-bit Ra register (E, L, H, X, W, Z, Y).


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