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MV1001SC Datasheet(PDF) 15 Page - Shindengen Electric Mfg.Co.Ltd |
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MV1001SC Datasheet(HTML) 15 Page - Shindengen Electric Mfg.Co.Ltd |
15 / 35 page ![]() MV1001SC 14 Additional explanation of resonant period in quasi-resonant operation Example of gate charge characteristics Figure 8 Adjusting the delay Ideally, the MOSFET should be turned on at a valley of resonance as shown in Figure 8. The corresponding condition is expressed by the following formula: Coss: Output capacitance of MOSFET Cr: Capacitance of D-S capacitor Cj: Junction capacitance of fly-wheel diode Since Vb = Vi - 2Vo - VF, switching losses are minimized. While the condition above may not be completely fulfilled in actual use, MOSFETs do not need to be switched on precisely at a valley. If the on-timing is far from the valley, it can be adjusted as follows: (1) The left side is large: (2) The right side is large: Delay the on-timing. Lengthen the resonant period. • Increase C8 or R4. • Add or increase Cr. toff2 1/4 of resonant period Tdon VGS Vth Vi+VF Vi-Vo Vb Qg(Vth)/IG_source t t VDS Qg (Vth): Accumulated charge until the voltage reaches the gate threshold Ig ) Vth ( Qg Td ) Cj Coss Cr ( L 2 4 1 on Tdon: Delay in response CAT.No.1A0102-1E |
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