AC12FSM datasheet(184/223 Pages) TECCOR

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AN1008

Application Notes

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AN1008 - 6

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Commutating dv/dt is specified for a half sinewave current at

60 Hz which fixes the di/dt of the commutating current. The com-

mutating di/dt for 50 Hz is approximately 20% lower while IRMS

rating remains the same. (Figure AN1008.4)

Figure AN1008.12

Waveshapes of Commutating dv/dt and

Associated Conditions

tgt: Gate-controlled Turn-on Time — SCR and Triac

The tgt is the time interval between the application of a gate pulse

and the on-state current reaching 90% of its steady-state value.

(Figure AN1008.13) As would be expected, turn-on time is a

function of gate drive. Shorter turn-on times occur for increased

gate drives. This turn-on time is actually only valid for resistive

loading. For example, inductive loading would restrict the rate-of-

rise of anode current. For this reason, this parameter does not

indicate the time that must be allowed for the device to stay on if

the gate signal is removed. (Refer to the description of “IL: Latch-

ing Current” on page AN1008-4.) However, if the load was resis-

tive and equal to the rated load current value, the device

definitely would be operating at a current above the dynamic

latching current in the turn-on time interval since current through

the device is at 90% of its peak value during this interval.

Figure AN1008.13

Waveshapes for Turn-on Time and

Associated Conditions

tq: Circuit-commutated Turn-off Time — SCR

The circuit-commutated turn-off time of the device is the time dur-

ing which the circuit provides reverse bias to the device (negative

anode) to commutate it off. The turn-off time occurs between the

time when the anode current goes negative and when the anode

positive voltage may be reapplied. (Figure AN1008.14) Turn-off

time is a function of many parameters and very dependent on

temperature and gate bias during the turn-off interval. Turn-off

time is lengthened for higher temperature so a high junction tem-

perature is specified. The gate is open during the turn-off interval.

Positive bias on the gate will lengthen the turn-off time; negative

bias on the gate will shorten it.

Figure AN1008.14

Waveshapes of tq Rating Test and

Associated Conditions

RθJC, RθJA: Thermal Resistance (Junction-to-case,

Junction-to-ambient) — SCR and Triac

The thermal-resistance characteristic defines the steady-state

temperature difference between two points at a given rate of

heat-energy transfer (dissipation) between the points. The ther-

mal-resistance system is an analog to an electrical circuit where

thermal resistance is equivalent to electrical resistance, tempera-

ture difference is equivalent to voltage difference, and rate of

heat-energy transfer (dissipation) is equivalent to current. Dissi-

pation is represented by a constant current generator since gen-

erated heat must flow (steady-state) no matter what the

resistance in its path. Junction-to-case thermal resistance estab-

lishes the maximum case temperature at maximum rated steady-

state current. The case temperature must be held to the maxi-

mum at maximum ambient temperature when the device is oper-

ating at rated current. Junction-to-ambient thermal resistance is

established at a lower steady-state current, where the device is in

free air with only the external heat sinking offered by the device

package itself. For RθJA, power dissipation is limited by what the

device package can dissipate in free air without any additional

heat sink:

TIME

di/dt

(di/dt) C

10%

63%

VDRM

(dv/dt)

Voltage across Triac

ESOURCE

ITRM

90%

10%

50%

10%

On-state Current

Rise

Time

Gate

Trigger

Pulse

Delay

Time

Turn-on

Time

Gate Pulse Width

Off-state Voltage

10%

ITM

50% ITM

50% IRM

Reverse Current

Off-State Leakage

Off-State Voltage

di/dt

dv/dt

trr

θJC

TJ TC

–

P AV

()

---------------------

θJA

TJ TA

–

P AV

()

---------------------

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