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2N4401 Datasheet(PDF) 1 Page - Diotec Semiconductor |
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2N4401 Datasheet(HTML) 1 Page - Diotec Semiconductor |
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1 / 2 page ![]() 2N4401 2N4401 General Purpose NPN Transistors General Purpose NPN-Transistoren IC = 600 mA hFE ~ 200 Tjmax = 150°C VCEO = 40 V Ptot = 250 mW Version 2017-12-06 TO-92 (10D3) Dimensions - Maße [mm] Typical Applications Signal processing, Switching, Amplification Commercial grade 1) Typische Anwendungen Signalverarbeitung, Schalten, Verstärken Standardausführung 1) Features General Purpose Compliant to RoHS, REACH, Conflict Minerals 1) Besonderheiten Universell anwendbar Konform zu RoHS, REACH, Konfliktmineralien 1) Mechanical Data 1) Mechanische Daten 1) Taped in ammo pack (Raster 2.54) 4000 Gegurtet in Ammo-Pack (Raster 2.54) Weight approx. 0.18 g Gewicht ca. Case material UL 94V-0 Gehäusematerial Solder & assembly conditions 260°C/10s Löt- und Einbaubedingungen MSL N/A Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren 2N4403 Maximum ratings 2) Grenzwerte 2) 2N4401 Collector-Emitter-voltage - Kollektor-Emitter-Spannung B open VCEO 40 V Collector-Base-voltage - Kollektor-Basis-Spannung E open VCBO 60 V Emitter-Base-voltage - Emitter-Basis-Spannung C open VEBO 6 V Power dissipation – Verlustleistung Ptot 625 mW 3) Collector current – Kollektorstrom DC IC 600 mA Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -55...+150°C -55…+150°C Characteristics Kennwerte Tj = 25°C Min. Typ. Max. DC current gain – Kollektor-Basis-Stromverhältnis 4) IC = 0.1 mA, VCE = 1 V IC = 1 mA, VCE = 1 V IC = 10 mA, VCE = 1 V IC = 150 mA, VCE = 1 V IC = 500 mA, VCE = 2 V hFE 20 40 80 100 40 – – – – – – – – 300 – 1 Please note the detailed information on our website or at the beginning of the data book Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches 2 TA = 25°C, unless otherwise specified – TA = 25°C, wenn nicht anders angegeben 3 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss 4 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% © Diotec Semiconductor AG http://www.diotec.com/ 1 Pb RoHS 2 x 2.54 E B C |
Similar Part No. - 2N4401_17 |
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Similar Description - 2N4401_17 |
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