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2N4401 Datasheet(PDF) 1 Page - Diotec Semiconductor

Part # 2N4401
Description  General Purpose NPN Transistors
PDF  2 Pages
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Manufacturer  DIOTEC [Diotec Semiconductor]
Direct Link  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

2N4401 Datasheet(HTML) 1 Page - Diotec Semiconductor

  2N4401_17 Datasheet HTML 1Page - Diotec Semiconductor 2N4401_17 Datasheet HTML 2Page - Diotec Semiconductor  
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2N4401
2N4401
General Purpose NPN Transistors
General Purpose NPN-Transistoren
IC
= 600 mA
hFE ~ 200
Tjmax = 150°C
VCEO = 40 V
Ptot = 250 mW
Version 2017-12-06
TO-92 (10D3)
Dimensions - Maße [mm]
Typical Applications
Signal processing,
Switching, Amplification
Commercial grade 1)
Typische Anwendungen
Signalverarbeitung,
Schalten, Verstärken
Standardausführung 1)
Features
General Purpose
Compliant to RoHS, REACH,
Conflict Minerals 1)
Besonderheiten
Universell anwendbar
Konform zu RoHS, REACH,
Konfliktmineralien 1)
Mechanical Data 1)
Mechanische Daten 1)
Taped in ammo pack
(Raster 2.54)
4000
Gegurtet in Ammo-Pack
(Raster 2.54)
Weight approx.
0.18 g
Gewicht ca.
Case material
UL 94V-0
Gehäusematerial
Solder & assembly conditions
260°C/10s
Löt- und Einbaubedingungen
MSL N/A
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
2N4403
Maximum ratings 2)
Grenzwerte 2)
2N4401
Collector-Emitter-voltage - Kollektor-Emitter-Spannung
B open
VCEO
40 V
Collector-Base-voltage - Kollektor-Basis-Spannung
E open
VCBO
60 V
Emitter-Base-voltage - Emitter-Basis-Spannung
C open
VEBO
6 V
Power dissipation – Verlustleistung
Ptot
625 mW 3)
Collector current – Kollektorstrom
DC
IC
600 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Characteristics
Kennwerte
Tj = 25°C
Min.
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhältnis 4)
IC = 0.1 mA,
VCE = 1 V
IC = 1 mA,
VCE = 1 V
IC = 10 mA,
VCE = 1 V
IC = 150 mA,
VCE = 1 V
IC = 500 mA,
VCE = 2 V
hFE
20
40
80
100
40
–
–
–
–
–
–
–
–
300
–
1
Please note the detailed information on our website or at the beginning of the data book
Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches
2
TA = 25°C, unless otherwise specified – TA = 25°C, wenn nicht anders angegeben
3
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
4
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
Pb
RoHS
2 x 2.54
E B C


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