BC618 datasheet(4/7 Pages) PHILIPS

4 / 7 page

2004 Nov 05

Philips Semiconductors

Product speciﬁcation

NPN Darlington transistor

BC618

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector-base cut-off current

VCB = 60 V; IE =0 A

−−

ICES

collector-emitter cut-off current

VBE = 0 V; VCE =60V

−−

µA

IEBO

emitter-base cut-off current

VEB = 10 V; IC =0 A

−−

hFE

DC current gain

VCE = 5 V; see Fig.2

IC = 1 mA

2000

−−

IC = 10 mA

4000

−−

IC = 200 mA

10000

−

70000

VCEsat

collector-emitter saturation voltage IC = 200 mA; IB = 0.2 mA

−−

1.1

VBEsat

base-emitter saturation voltage

IC = 200 mA; IB = 0.2 mA

−−

1.6

collector capacitance

VCB = 30 V; IE =0 A

−

3.5

−

transition frequency

VCE =5V; IC = 500 mA; f = 100 MHz 155

−−

MHz

handbook, full pagewidth

60000

80000

20000

40000

MGD837

10−1

IC (mA)

hFE

102

103

Fig.2 DC current gain; typical values.

VCE =2V.

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