Philips Semiconductors

BSH111

N-channel enhancement mode field-effect transistor

Product data

Rev. 02 — 26 April 2002

2 of 13

9397 750 09629

© Koninklijke Philips Electronics N.V. 2002. All rights reserved.

5.

Quick reference data

6.

Limiting values

Table 2:

Quick reference data

Symbol Parameter

Conditions

Typ

Max

Unit

drain-source voltage (DC)

25

°C ≤ T

-

55

V

drain current (DC)

-

335

mA

total power dissipation

-

0.83

W

junction temperature

-

150

°C

drain-source on-state resistance

2.3

4.0

Ω

2.4

5.0

Ω

3.1

8.0

Ω

Table 3:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

drain-source voltage (DC)

25

-

55

V

drain-gate voltage (DC)

25

-55

V

gate-source voltage

-

±10

V

drain current (DC)

Figure 2 and 3

-

335

mA

-

212

mA

peak drain current

Figure 3

-

1.3

A

total power dissipation

-

0.83

W

storage temperature

−65

+150

°C

junction temperature

−65

+150

°C

Source-drain diode

source (diode forward) current (DC)

-

335

mA

peak source (diode forward) current

-

1.3

A