TSM120N06LCP datasheet(2/6 Pages) TSC

2 / 6 page

TSM120N06LCP

Taiwan Semiconductor

Version: A1602

ELECTRICAL SPECIFICATIONS (T

A = 25°C unless otherwise noted)

PARAMETER

CONDITIONS

SYMBOL

MIN

TYP

MAX

UNIT

Static

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250µA

BVDSS

Gate Threshold Voltage

VGS = VDS, ID = 250µA

VGS(TH)

1.2

1.7

2.5

Gate-Source Leakage Current

VGS = ±20V, VDS = 0V

IGSS

±100

Drain-Source Leakage Current

VGS = 0V, VDS = 60V

IDSS

µA

VGS = 0V, VDS = 60V

TJ = 125°C

100

Drain-Source On-State Resistance

(Note 3)

VGS = 10V, ID = 10A

RDS(on)

9.7

VGS = 4.5V, ID = 10A

Forward Transconductance

(Note 3)

VDS = 5V, ID = 10A

gfs

Dynamic

(Note 4)

Total Gate Charge

VGS = 10V, VDS = 30V,

ID = 10A

Total Gate Charge

VGS = 4.5V, VDS = 30V,

ID = 10A

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

7.5

Input Capacitance

VGS = 0V, VDS = 30V

f = 1.0MHz

Ciss

2118

Output Capacitance

Coss

136

Reverse Transfer Capacitance

Crss

Gate Resistance

f = 1.0MHz, open drain

0.5

1.6

3.2

Switching

(Note 4)

Turn-On Delay Time

VGS = 10V, VDS = 30V,

ID = 10A, RG = 2Ω,

td(on)

6.4

Turn-On Rise Time

13.4

Turn-Off Delay Time

td(off)

25.6

Turn-Off Fall Time

6.6

Source-Drain Diode

Forward Voltage

(Note 3)

VGS = 0V, IS = 10A

VSD

Reverse Recovery Time

IS = 10A ,

dI/dt = 100A/

μs

trr

Reverse Recovery Charge

Qrr

Notes:

Current limited by package.

L = 0.3mH, VGS = 10V, VDD = 30V, RG = 25Ω, IAS = 20A, Starting TJ = 25°C

Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%.

Switching time is essentially independent of operating temperature.

ORDERING INFORMATION

PART NO.

PACKAGE

PACKING

TSM120N06LCP ROG

TO-252(DPAK)

2,500pcs / 13

” Reel

TSM120N06LCP Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

TSM120N06LCP Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL