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BYP35A05 Datasheet(PDF) 1 Page - Diotec Semiconductor |
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BYP35A05 Datasheet(HTML) 1 Page - Diotec Semiconductor |
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1 / 2 page  BYP35A05 ... BYP35A6 | BYP35K05 ... BYP35K6 BYP35A05 ... BYP35A6 | BYP35K05 ... BYP35K6 Standard Recovery Press-fit Rectifier Diodes Einpress-Gleichrichterdioden mit Standard-Sperrverzug IFAV = 35 A VF < 1.1 V Tjmax = 200°C VRRM = 100...600 V IFSM = 360/400 A trr ~ 1500 ns Version 2018-01-04 Ø 12.75 x 4.2 Press-fit Dimensions - Maße [mm] Typical Applications 50/60 Hz Mains Rectification, Power Supplies, Polarity Protection Commercial grade 1) Typische Anwendungen 50/60 Hz Netzgleichrichtung, Stromversorgungen, Verpolschutz Standardausführung 1) Features High junction temperature Two polarity versions: A = Anode to lead wire K = Cathode to lead wire For press-fit assembly into aluminium cooling plate Compliant to RoHS, REACH, Conflict Minerals 1) Besonderheiten Hohe Sperrschichttemperatur Zwei Polaritäten: A = Anode am Anschlussdraht K = Kathode am Anschlussdraht Für Einpressmontage in Alu-Kühlblech Konform zu RoHS, REACH, Konfliktmineralien 1) Mechanical Data 1) Mechanische Daten 1) Packed in cardboard trays 300 Verpackt in Einlagekartons Weight approx. 10 g Gewicht ca. Plastic material UL 94V-0 Kunststoffmaterial Solder & assembly conditions 260°C/10s Löt- und Einbaubedingungen MSL = N/A Maximum ratings 2) Grenzwerte 2) Type / Wire to / Anode Typ Draht an Cathode Repetive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] BYP35A05 BYP35K05 50 50 BYP35A1 BYP35K1 100 100 BYP35A2 BYP35K2 200 200 BYP35A3 BYP35K3 300 300 BYP35A4 BYP35K4 400 400 BYP35A6 BYP35K6 600 600 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last TC = 150°C 3) IFAV 35 A Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz TC = 150°C 3) IFRM 130 A Peak forward surge current Stoßstrom in Fluss-Richtung Half sine-wave Sinus-Halbwelle 50 Hz (10 ms) 60 Hz (8.3 ms) IFSM 360 A 400 A Rating for fusing Grenzlastintegral t < 10 ms i2t 660 A2s Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -50...+200°C -50...+200°C Maximum admissible press-in force Maximal zulässige Einpresskraft FpM 4 kN 1 Please note the detailed information on our website or at the beginning of the data book Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches 2 TA = 25°C unless otherwise specified – TA = 25°C wenn nicht anders angegeben 3 Temperature measured at the metallic base – Temperatur am Metallsockel gemessen © Diotec Semiconductor AG http://www.diotec.com/ 1 Ø 12.75 Ø ±0.5 11 1.3 A K Pb RoHS |
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