DMN3021LFDF-7 datasheet(2/7 Pages) DIODES

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DMN3021LFDF

Datasheet number: DS37731 Rev. 2 - 2

2 of 7

www.diodes.com

July 2016

DMN3021LFDF

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

TA = +25°C

TA = +70°C

9.3

7.5

t<5s

TA = +25°C

TA = +70°C

11.8

9.4

Pulsed Drain Current (380

μs Pulse, Duty Cycle = 1%)

IDM

Maximum Continuous Drain-Source Diode Forward Current (Note 6)

1.8

Avalanche Current (Note 7) L = 0.1mH

IAS

Repetitive Avalanche Energy (Note 7) L = 0.1mH

EAS

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

TA = +25°C

0.73

TA = +70°C

0.47

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RΘJA

174

°C/W

t < 5s

112

Total Power Dissipation (Note 6)

TA = +25°C

2.03

TA = +70°C

1.30

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RΘJA

°C/W

t < 5s

Thermal Resistance, Junction to Case (Note 6)

Steady State

RΘJC

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

—

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current TJ = +25°C

IDSS

—

µA

VDS = 30V, VGS = 0V

Gate-Source Leakage

IGSS

—

±100

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(TH)

1.0

—

2.2

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

—

Ω

VGS = 10V, ID = 7A

—

VGS = 4.5V, ID = 7A

Diode Forward Voltage

VSD

—

0.8

1.2

VGS = 0V, IS = 2.2A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

CISS

—

706

—

VDS = 15V, VGS = 0V,

f = 1.0MHz

Output Capacitance

COSS

—

112

—

Reverse Transfer Capacitance

CRSS

—

Gate Resistance

—

2.6

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 10V)

—

VDS = 15V, ID = 5A

Total Gate Charge (VGS = 4.5V)

—

6.7

—

Gate-Source Charge

QGS

—

1.9

—

Gate-Drain Charge

QGD

—

2.5

—

Turn-On Delay Time

tD(ON)

—

5.4

—

VDS = 15V, VGS = 4.5V,

RG = 1.7Ω, ID = 5A

Turn-On Rise Time

—

6.8

—

Turn-Off Delay Time

tD(OFF)

—

9.7

—

Turn-Off Fall Time

—

4.7

—

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.

7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

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