MTT

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Vishay Electro-Films

Revision: 06-Apr-17

2

Document Number: 61046

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

DIMENSIONS in inches

SCHEMATIC

MECHANICAL SPECIFICATIONS

PARAMETER

Chip Size

0.038" x 0.038" ± 0.002" (0.965 mm x 0.965 mm ± 0.05 mm)

Chip Thickness

0.010" ± 0.002" (0.254 mm ± 0.05 mm)

Chip Substrate Material

Oxidized silicon, 10 kÅ minimum SiO2

Resistor Material

Tantalum nitride, self-passivating

Bonding Pads

0.004" x 0.004" (0.10 mm x 0.10 mm)

Number of Pads

21

Pad Material

10 kÅ minimum aluminum

Backing

None, lapped semiconductor silicon

GLOBAL PART NUMBER INFORMATION

Global Part Number: MTT11002KMANHWS

Global Part Number Description: MTT 110K 10 %, 250 ppm/°C, Al termination, no back metal, class H, WS

MODEL

RESISTANCE

RESISTANCE

MULTIPLIER

CODE

TOL.

CODE

(%)

TCR

(ppm/°C)

TERMINATION

BACK

METAL

VISUAL

CLASS

PACKAGING

CODE

MTT

First 4 digits

are significant

figures of

resistance

A = 0.1

0 = 1

1 = 10

2 = 100

F = 1.0

G = 2.0

J = 5.0

K = 10

M = 20

L = 25

C = ± 50

K = ± 100

M = ± 250

R = 0 / -250

G = gold

A = aluminum

G = gold

N = none

H = class H

K = class K

WS =

waffle pack

100 min,

1 mult

Historical Part Number: WMTT00210002K (will continue to be accepted)

0.038

0.009

0.004

21

0.004

TYPICAL RANGE

1.1 k

Ω to 5.5 kΩ

0.038

0.009

0.004

0.004

TYPICAL RANGE

11 k

Ω to 275 kΩ

R

R

R

RR

R

R

RR

R

10

1

21

R

T

= 110

R

R

10

R

10

R

10

R

10

R

10

R

10

R

10

R

10

R

10

R

002

K

A

N

H

M

1

WS

T

MT

1