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DB32 Datasheet(PDF) 1 Page - Diotec Semiconductor |
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DB32 Datasheet(HTML) 1 Page - Diotec Semiconductor |
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1 / 2 page ![]() DB3, DB31, DB32, DB4 DB3, DB31, DB32, DB4 Trigger-Diodes (Diacs) Triggerdioden (Diacs) Ptot = 150 mW IPM = ± 2 A Tjmax = 100°C VBO = 32, 34, 40 V ΔVBO = < 3.8 V Version 2017-12-19 ~DO-35 / ~SOD-27 Glass case / Glasgehäuse Dimensions - Maße [mm] Typical Applications Triggering of Triacs and Thyristors AC switches and controls Dimmer circuits Commercial grade 1) Typische Anwendungen Zünden von Triacs und Thyristoren Wechselstromschalter und -steller Dimmer-Schaltungen Standardausführung 1) Features Bidirectional switching DB31/32: More tight VBO range Protected against fault triggering by light Compliant to RoHS, REACH, Conflict Minerals 1) Besonderheiten Bidirektionales Schalten DB31/32: engerer VBO Bereich Geschützt gegen Fehl- zündung durch Licht Konform zu RoHS, REACH, Konfliktmineralien 1) Mechanical Data 1) Mechanische Daten 1) Taped in ammo pack 5000 Gegurtet in Ammo-Pack Weight approx. 0.17 g Gewicht ca. Solder & assembly conditions 260°C/10s Löt- und Einbaubedingungen MSL N/A Maximum ratings 2) Grenzwerte 2) Power dissipation Verlustleistung TA = 50°C Ptot 150 mW 3) Peak pulse current (120 Hz pulse repetition rate) Max. Triggerstrom (120 Hz Puls-Wiederholrate) tp ≤ 20 µs IPM ± 2 A 3) Operating Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -50...+100°C -50...+175°C Characteristics 4) Kennwerte 4) Breakover voltage Durchbruchspannung dv/dt = 10 V/µs DB3 DB31 DB32 DB4 VBO 28 ... 36 V 30 ... 34 V 32 ... 36 V 35 ... 45 V Breakover current Durchbruchstrom V = 98% VBO IBO < 200 µA Asymmetry of breakover voltage Unsymmetrie der Durchbruchspannung |V(BO)F – V(BO)R| ΔVBO < 3.8 V Foldback voltage Spannungs-Rücksprung dv/dt = 10 V/µs ΔI = IBO to/auf IF = 10 mA ΔVF/R > 5 V Thermal resistance junction to ambient Wärmewiderstand Sperrschicht – Umgebung RthA < 300 K/W 3) 1 Please note the detailed information on our website or at the beginning of the data book Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches 2 TA = 25°C unless otherwise specified – TA = 25°C wenn nicht anders angegeben 3 Valid, if leads are kept at ambient temperature at a distance of 10 mm from case Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden 4 See Fig. 1 and 2 – Siehe Fig. 1 und 2 © Diotec Semiconductor AG http://www.diotec.com/ 1 Pb RoHS Ø 1.9±0.1 Ø max 0.5 |
Similar Part No. - DB32 |
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Similar Description - DB32 |
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