VISHAY

BFR92AF

Document Number 85098

Rev. 1.3, 30-Aug-04

Vishay Semiconductors

www.vishay.com

1

2

1

3

Electrostatic sensitive device.

Observe precautions for handling.

16867

Silicon NPN Planar RF Transistor

Description

The main purpose of this bipolar transistor is broad-

band amplification up to 1 GHz. In the space-saving

3-pin surface-mount SOT-490 package electrical per-

formance and reliability are taken to a new level cov-

ering a smaller footprint on PC boards than previous

packages. In addition to space savings, the SOT-490

provides a higher level of reliability than other 3-pin

packages, such as more resistance to moisture. Due

to the short length of its leads the SOT-490 is also

reducing package inductances resulting in some bet-

ter electrical performance. All of these aspects make

this device an ideal choice for demanding RF applica-

tions.

Features

• High power gain

• Low noise figure

• High transition frequency

Applications

Wide band amplifier up to GHz range.

Mechanical Data

Typ: BFR92AF

Case: SOT-490 Plastic case

Weight: approx. 2.5 mg

Pinning: 1 = Collector, 2 = Base, 3 = Emitter

Parts Table

Absolute Maximum Ratings

Maximum Thermal Resistance

Part

Marking

Package

BFR92AF

P2

SOT-490

Parameter

Test condition

Symbol

Value

Unit

Collector-base voltage

20

V

Collector-emitter voltage

15

V

Emitter-base voltage

2V

Collector current

30

mA

Total power dissipation

200

mW

Junction temperature

150

°C

Storage temperature range

-65 to +150

°C

Parameter

Test condition

Symbol

Value

Unit

Junction ambient

1)

450

K/W