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M54567FP Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor

Part # M54567FP
Description  4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
PDF  4 Pages
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

M54567FP Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor

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Aug. 1999
PIN CONFIGURATION
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54567P/FP
4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54567P and M54567FP are four-circuit Darlington transis-
tor arrays with clamping diodes. The circuits are made of
PNP and NPN transistors. Both the semiconductor inte-
grated circuits perform high-current driving with extremely
low input-current supply.
FEATURES
High breakdown voltage (BVCEO
≥ 50V)
High-current driving (Ic(max) = 1.5A)
With clamping diodes
Driving available with NMOS IC output
Wide operating temperature range (Ta = –20 to +75
°C)
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and power amplification
FUNCTION
The M54567P and M54567FP each have four circuits, which
are made of PNP transistors and NPN Darlington transistors.
The input has 8k
Ω, and a spike-killer clamping diode is pro-
vided between the output pin (collector) and COM pin. All
output transistor emitters are connected to the GND pin.
Collector current is 1.5A maximum. The maximum collector-
emitter voltage is 50V.
The M54567FP is enclosed in a molded small flat package,
enabling space-saving design.
CIRCUIT DIAGRAM
V
V
A
V
V
W
°C
°C
10
–0.5 ~ +50
1.5
–0.5 ~ +30
50
1.5
1.0
1.92(P)/1.00(FP)
–20 ~ +75
–55 ~ +125
IF
A
Ratings
Unit
Symbol
Parameter
Conditions
Supply voltage
Collector-emitter voltage
Collector current
Input voltage
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Output, H
Current per circuit output, L
Pulse Width
≤ 10ms, Duty Cycle ≤ 5%
Pulse Width
≤ 100ms, Duty Cycle ≤ 5%
Ta = 25
°C, when mounted on board
VCC
VCEO
IC
VI
VR
Pd
Topr
Tstg
Clamping diode forward current
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75
°C)
22K
2K
5.5K
3K
8K
GND
COM
VCC
INPUT
OUTPUT
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit :
Ω
The four circuits share the COM and GND.
1
O1
←
IN1
→
IN2
→
O2
←
VCC
COM COMMON
VCC
COM COMMON
GND
GND
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
→O3
←IN3
←IN4
→O4
OUTPUT4
INPUT4
INPUT3
OUTPUT3
OUTPUT1
INPUT1
INPUT2
OUTPUT2
16P4(P)
Package type 16P2N-A(FP)


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