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PPS1045 Datasheet(PDF) 1 Page - Diotec Semiconductor

Part # PPS1045
Description  SMD Schottky Barrier Rectifier Diodes
PDF  2 Pages
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Manufacturer  DIOTEC [Diotec Semiconductor]
Direct Link  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

PPS1045 Datasheet(HTML) 1 Page - Diotec Semiconductor

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PPS1030 ... PPS1060
PPS1030 ... PPS1060
SMD Schottky Barrier Rectifier Diodes
SMD Schottky-Gleichrichterdioden
IFAV
= 10 A
VF@5A/125°C ~ 0.31 V
Tjmax
= 150°C
VRRM = 30...60 V
IFSM1 = 250/275 A
Version 2017-12-11
PowerSMD
(~ TO-277“B“)
Dimensions - Maße [mm]
Typical Applications
Output Rectification in DC/DC Con-
verters and Offline Power Supplies
Solar Bypass Diodes
Polarity Protection
Free-wheeling diodes
Commercial grade 1)
Typische Anwendungen
Ausgangsgleichrichtung in DC/DC-
Wandlern und Steckernetzteilen
Solar-Bypassdioden
Verpolschutz
Freilaufdioden
Standardausführung 1)
Features
Low forward voltage drop
High power dissipation
Low profile package
Compliant to RoHS, REACH,
Conflict Minerals 1)
Besonderheiten
Niedrige Fluss-Spannung
Hohe Leistungsfähigkeit
Flache Bauform
Konform zu RoHS, REACH,
Konfliktmineralien 1)
Mechanical Data 1)
Mechanische Daten 1)
Taped and reeled
3000 / 13“
Gegurtet auf Rolle
Weight approx.
0.1 g
Gewicht ca.
Case material
UL 94V-0
Gehäusematerial
Solder & assembly conditions
260°C/10s
Löt- und Einbaubedingungen
MSL = 1
Maximum ratings 2)
Grenzwerte 3)
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
PPS1030
30
30
PPS1040
40
40
PPS1045
45
45
PPS1050
50
50
PPS1060
60
60
Max. average forward rectified current
Dauergrenzstrom in Einwegschaltung
TC = 100°C 3)
IFAV
10 A 4)
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
TC = 100°C 3)
IFRM
40 A 4)
Peak forward surge current
(Half sine-wave)
Stoßstrom in Fluss-Richtung
(Sinus-Halbwelle)
PPS1030 ... PPS1045
50 Hz (10 ms)
60 Hz (8.3 ms)
IFSM
250 A 4)
275 A 4)
PPS1050 ... PPS1060
50 Hz (10 ms)
60 Hz (8.3 ms)
IFSM
220 A 4)
250 A 4)
Rating for fusing – Grenzlastintegral
t < 10 ms
i2t
240 A2s
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+150°C
-50...+150°C
1
Please note the detailed information on our website or at the beginning of the data book
Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches
2
TA = 25°C unless otherwise specified – TA = 25°C wenn nicht anders angegeben
3
Measured at heat flange – Gemessen an der Kühlfahne
4
Both anode pins connected – Beide Anodenanschlüsse kontaktiert
© Diotec Semiconductor AG
http://www.diotec.com/
1
4.0±0.2
0.6
0.3±0.1
1.1±0.2
0.9
1.8±0.1
LYYWW
0.8±0.15
1.84
1.3±0.2
3.0±0.1
Pb
RoHS
Halogen
FREE


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