IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

6,306,728B1

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXFE 80N50

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

V

50

70

S

C

iss

9890

pF

C

oss

V

1750

pF

C

rss

460

pF

t

d(on)

61

n s

t

r

V

70

n s

t

d(off)

R

102

n s

t

f

27

n s

Q

g(on)

380

nC

Q

gs

V

80

nC

Q

gd

173

nC

R

thJC

0.22

K/W

R

thCK

0.07

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

I

S

V

GS

= 0 V

80

A

I

SM

Repetitive;

320

A

pulse width limited by T

JM

V

SD

I

1.3

V

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

t

rr

I

250

n s

Q

RM

1.2

µC

I

RM

8A

ISOPLUS-227 B

Please see IXFN80N50 data sheet

for characteristic curves.

Notes: 1. Pulse width limited by T

JM.

2. Pulse test, t

≤ 300 ms, duty cycle d ≤ 2%.

3. I