2 - 4

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TO-247 AD (IXFH) Outline

Dim. Millimeter

Inches

Min.

Max.

Min.

Max.

A

19.81 20.32

0.780 0.800

B

20.80 21.46

0.819 0.845

C

15.75 16.26

0.610 0.640

D

3.55

3.65

0.140 0.144

E

4.32

5.49

0.170 0.216

F

5.4

6.2

0.212 0.244

G

1.65

2.13

0.065 0.084

H

-

4.5

-

0.177

J

1.0

1.4

0.040 0.055

K

10.8

11.0

0.426 0.433

L

4.7

5.3

0.185 0.209

M

0.4

0.8

0.016 0.031

N

1.5

2.49

0.087 0.102

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.9

5.1

.193

.201

A

1

2.7

2.9

.106

.114

A

2

.02

.25

.001

.010

b

1.15

1.45

.045

.057

b

2

1.9

2.1

.75

.83

C

.4

.65

.016

.026

D

13.80

14.00

.543

.551

E

15.85

16.05

.624

.632

E

1

13.3

13.6

.524

.535

e

5.45 BSC

.215 BSC

H

18.70

19.10

.736

.752

L

2.40

2.70

.094

.106

L1

1.20

1.40

.047

.055

L2

1.00

1.15

.039

.045

L3

0.25 BSC

.010 BSC

L4

3.80

4.10

.150

.161

(IXFX) Outline

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A

4.83

5.21

.190 .205

A

1

2.29

2.54

.090 .100

A

2

1.91

2.16

.075 .085

b

1.14

1.40

.045 .055

b

1

1.91

2.13

.075 .084

b

2

2.92

3.12

.115 .123

C

0.61

0.80

.024 .031

D

20.80

21.34

.819 .840

E

15.75

16.13

.620 .635

e

5.45 BSC

.215 BSC

L

19.81

20.32

.780 .800

L1

3.81

4.32

.150 .170

Q

5.59

6.20

.220 .244

R

4.32

4.83

.170 .190

Min. Recommended Footprint

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

V

DS

= 10 V; I

6

10

S

C

iss

4500

pF

C

oss

V

GS

= 0 V, V

430

pF

C

rss

150

pF

t

d(on)

27

ns

t

r

V

GS

= 10 V, V

30

ns

t

d(off)

R

120

ns

t

f

30

ns

Q

g(on)

220

nC

Q

gs

V

GS

= 10 V, V

30

nC

Q

gd

85

nC

R

thJC

0.35

K/W

R

thCK

0.25

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

I

S

V

14N100

14

A

15N100

15

A

I

SM

Repetitive;

14N100

56

A

pulse width limited by T

JM

15N100

60

A

V

SD

I

1.5

V

Pulse test, t

£ 300 ms, duty cycle d £ 2 %

t

rr

T

200

ns

T

350

ns

Q

RM

T

mC

T

mC

I

RM

T

A

T

A

I

-di/dt = 100 A/

ms,

V

(TO-247 Case Style)

IXFH14N100

IXFT14N100

IXFX15N100

IXFH15N100

IXFT15N100

IXFX14N100

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025