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IW1830 Datasheet(PDF) 4 Page - Dialog Semiconductor |
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IW1830 Datasheet(HTML) 4 Page - Dialog Semiconductor |
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4 / 6 page ![]() iW1830 Off-Line Digital Green-Mode Quasi-Resonant PWM Controller Integrated with Power MOSFET Rev. 1.0 Product Summary © 2016 Dialog Semiconductor www.dialog-semiconductor.com 4 of 6 23-August-2016 Absolute maximum ratings are the parameter values or ranges which can cause permanent damage if exceeded. Parameter Symbol Value Units DC supply voltage range (pin 1, ICC = 20mA max) VCC -0.3 to 25.0 V Continuous DC supply current at VCC pin (VCC = 15V) ICC 20 mA VSENSE input (pin 2, IVsense ≤ 10mA) -0.7 to 4.0 V ISENSE input (pin 4) -0.3 to 4.0 V Drain-source voltage VDSS 700 V Continuous drain current @ TC=25°C ID 4 A Continuous drain current @ TC=100°C 2.9 Pulsed drain current (Note 1) IDM 16 A Single Pulse Avalanche Energy (starting TJ = 25°C) EAS 150 mJ Maximum junction temperature TJMAX 150 °C Operating junction temperature TJOPT -40 to 150 °C Storage temperature TSTG –55 to 150 °C Electrostatic Discharge Capability (Human Body Model), JEDEC JS-001- 2012 ESD(HBM) ±4.5 kV Electrostatic Discharge Capability (Charge Device Model), JEDEC JESD22-C101 ESD(CDM) ±1.0 kV Latch-up test per JESD78A ±100 mA Notes: Note 1. Repetitive rating; pulse width limited by maximum junction temperature. 5 Absolute Maximum Ratings 6 Thermal Characteristics Parameter Symbol Value Units Thermal Resistance Junction-to-Ambient1 θJA 80 °C/W Thermal Resistance Junction-to-GND pin (pin 3) 2 ψJB 25 °C/W Thermal Resistance Junction-to-Drain pin (pin 7 and pin 8) 2 ψJ-MOSFET 35 °C/W Thermal Shutdown Threshold3 TSD 150 °C Thermal Shutdown Recovery 3 TSD-R 120 °C Notes: Note 1. Device is mounted on a JEDEC single-sided board with 100mm2 of 35μm thick copper, in a one-cubic-foot natural convection chamber with 1W dissipated power. Note 2. ψJB [Psi Junction to Board] provides an estimation of the die junction temperature relative to the PCB [Board] surface temperature. ψJ-MOSFET [Psi Junction to Drain pin] provides an estimation of the die junction temperature relative to the Drain pin [internal MOSFET Drain] surface temperature. ψJB is measured at the ground pin (pin 3) without using any thermal adhesives. See Section 10.14 for more information. Note 3. These parameters are typical and they are guaranteed by design. |
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