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TAS5152 Datasheet(PDF) 9 Page - Texas Instruments |
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TAS5152 Datasheet(HTML) 9 Page - Texas Instruments |
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9 / 26 page ![]() TAS5152 SLES127 − FEBRUARY 2005 www.ti.com 9 ELECTRICAL CHARACTERISTICS RL= 4 Ω. FPWM = 384 kHz, unless otherwise noted. All performance is in accordance with recommended operating conditions unless otherwise specified. SYMBOL PARAMETER CONDITIONS TAS5152 SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS Internal Voltage Regulator and Current Consumption VREG Voltage regulator, only used as a reference node VDD = 12 V 3 3.3 3.6 V IVDD VDD supply current Operating, 50% duty cycle 7 17 mA IVDD VDD supply current Idle, reset mode 6 11 mA IGVDD_x Gate supply current per half-bridge 50% duty cycle 5 16 mA IGVDD_x Gate supply current per half-bridge Reset mode 0.3 1 mA IPVDD_x Half-bridge idle current 50% duty cycle, without output filter or load 15 25 mA IPVDD_x Half-bridge idle current Reset mode, no switching 7 25 µA Output Stage MOSFETs RDSon,LS Drain-to-source resistance, LS TJ= 25°C, includes metallization resistance, GVDD = 12 V 140 155 m Ω RDSon,HS Drain-to-source resistance, HS TJ= 25°C, includes metallization resistance, GVDD = 12 V 140 155 m Ω |
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