A Microchip Technology Company

©2011 Silicon Storage Technology, Inc.

DS75013A

07/11

Product Brief

www.microchip.com

Features

• High Gain:

– Typically 29 dB gain across 2.4~2.5 GHz over tempera-

ture -40°C to +85°C

• High linear output power (at 3.3V):

– >28 dBm P1dB

– ~2.5% added EVM up to 20 dBm for 54 Mbps 802.11g signal

– Meets 802.11g OFDM ACPR requirement up to 24 dBm

– Meets 802.11b ACPR requirement up to 23.5 dBm

• High power-added efficiency/Low operating cur-

rent for both 802.11g/b applications

• Low Shut-down Current (~2 µA)

• High temperature stability

– ~1 dB power variation between -40°C to +85°C

– ~3 dB gain variation between -40°C to +85°C

• Temperature and load insensitive on-chip power

detector

– 20 dB dynamic range

• Simple input/output matching

• Packages available

– 8-contact XSON – 2mm x 2mm x 0.45mm

• All devices are RoHS compliant

Applications

• WLAN (IEEE 802.11b/g/n)

• Home RF

• Cordless phones

• 2.4 GHz ISM wireless equipment

Block Diagram

Product Ordering

Valid combinations for SST12LP08A

SST12LP08A-QX8E

SST12LP08A Evaluation Kits

SST12LP08A-QX8E-K

Note: Valid combinations are those products in mass produc-

tion or will be in mass production. Consult your SST sales

representative to confirm availability of valid combinations

and to determine availability of new combinations.

DET

75013 B1.0

Bias Circuit

2.4 GHz High-Power, High-Gain Power Amplifier Module

SST12LP08A

The SST12LP08A is a versatile power amplifier based on the highly-reliable

InGaP/GaAs HBT technology. Easily configured for linear high-power applications

with excellent power-added efficiency while operating over the 2.4- 2.5 GHz fre-

quency band, it typically provides 29 dB gain with 34% power-added efficiency,

while meeting 802.11g spectrum mask at 24 dBm. The SST12LP08A also fea-

tures easy board-level usage along with high-speed power-up/down control

through a single combined reference voltage pin and is offered in an 8-contact

XSON package.