ALD114804A/ALD114804/

Advanced Linear Devices

2 of 12

ALD114904A/ALD114904, Vers. 2.3

Drain-Source voltage, VDS

10.6V

Gate-Source voltage, VGS

10.6V

Power dissipation

500 mW

Operating temperature range SCL, PCL, SAL, PAL

0°C to +70°C

Storage temperature range

-65°C to +150°C

Lead temperature, 10 seconds

+260°C

CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.

ABSOLUTE MAXIMUM RATINGS

Notes:

1

Consists of junction leakage currents

OPERATING ELECTRICAL CHARACTERISTICS

ALD114804A/ALD114904A

ALD114804/ALD114904

Parameter

Symbol

Min

Typ

Max

Min

Typ

Max

Unit

Test Conditions

Gate Threshold Voltage

VGS(th)

-0.42

-0.40

-0.38

-0.44

-0.40

-0.36

V

IDS =1µA, VDS = 0.1V

Offset Voltage

VOS

25

7

20

mV

IDS =1µA

VGS(th)1-VGS(th)2

Offset Voltage Tempco

TCVOS

55

µV/°CVDS1 = VDS2

Gate Threshold Voltage

TCVGS(th)

-1.7

-1.7

mV/°CIDS = 1µA, VDS = 0.1V

Tempco

0.0

0.0

IDS = 20µA, VDS = 0.1V

+1.6

+1.6

IDS = 40µA, VDS = 0.1V

Drain Source On Current

IDS(ON)

12.0

12.0

mA

VGS = +9.1V, VDS = +5V

3.0

3.0

VGS = +3.6V, VDS = +5V

Forward Transconductance

GFS

1.4

1.4

mmho

VGS = +3.6V

VDS = +8.6V

Transconductance Mismatch

∆GFS

1.8

1.8

%

Output Conductance

GOS

68

68

µmho

VGS = +3.6V

VDS = +8.6V

Drain Source On Resistance

RDS(ON)

500

500

Ω

VGS = +3.6V

VDS = +0.1V

Drain Source On Resistance

RDS(ON)

5.4

5.4

KΩ

VGS = +0.0V

VDS = +0.1V

Drain Source On Resistance

∆RDS(ON)

10

10

%

Tolerance

Drain Source On Resistance

∆RDS(ON)

0.5

0.5

%

Mismatch

Drain Source Breakdown

BVDSX

10

10

V

V- = VGS = -1.4V

Voltage

IDS = 1.0µA

IDS(OFF)

10

400

10

400

pA

VGS = -1.4V, VDS =+5V

44

nA

TA = 125°C

IGSS

3

200

3

200

pA

VGS = +5V, VDS = 0V

11

nA

TA =125°C

Input Capacitance

CISS

2.5

2.5

pF

Transfer Reverse Capacitance

CRSS

0.1

0.1

pF

Turn-on Delay Time

ton

10

10

ns

V+ = 5V, RL= 5KΩ

Turn-off Delay Time

toff

10

10

ns

V+ = 5V, RL= 5KΩ

Crosstalk

60

60

dB

f = 100KHz