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UNR511F Datasheet(PDF) 2 Page - Panasonic Semiconductor

Part # UNR511F
Description  Silicon PNP epitaxial planar type
PDF  17 Pages
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Manufacturer  PANASONIC [Panasonic Semiconductor]
Direct Link  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

UNR511F Datasheet(HTML) 2 Page - Panasonic Semiconductor

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2
UNR511x Series
SJH00022BED
■ Electrical Characteristics T
a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = −10 µA, IE = 0
−50
V
Collector-emitter voltage (Base open)
VCEO
IC = −2 mA, IB = 0
−50
V
Collector-base cutoff current (Emitter open)
ICBO
VCB
= −50 V, I
E
= 0
− 0.1
µA
Collector-emitter cutoff current (Base open)
ICEO
VCE = −50 V, IB = 0
− 0.5
µA
Emitter-base
UNR5110/5115/5116/5117
IEBO
VEB = −6 V, IC = 0
− 0.01
mA
cutoff current UNR5113
− 0.1
(Collector open) UNR5112/5114/511D/
− 0.2
511E/511M/511N/511T
UNR511Z
− 0.4
UNR5111
− 0.5
UNR511F/511H
−1.0
UNR5119
−1.5
UNR5118/511L/511V
−2.0
Forward current
UNR511V
hFE
VCE =
−10 V, I
C =
−5 mA
6
20
transfer ratio
UNR5118/511L
20
UNR5119/511D/511F/511H
30
UNR5111
35
UNR5112/511E
60
UNR511Z
60
200
UNR5113/5114/511M
80
UNR511N/511T
80
400
UNR5110*/5115*/5116*/5117*
160
460
Collector-emitter saturation voltage
VCE(sat)
IC
= −10 mA, I
B
= − 0.3 mA
− 0.25
V
UNR511V
IC = −10 mA, IB = −1.5 mA
Output voltage high-level
VOH
VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ−4.9
V
Output voltage low-level
VOL
VCC
= −5 V, V
B
= −2.5 V, R
L
= 1 kΩ− 0.2
V
UNR5113
VCC = −5 V, VB = −3.5 V, RL = 1 kΩ
UNR511D
VCC = −5 V, VB = −10 V, RL = 1 kΩ
UNR511E
VCC
= −5 V, V
B
= −6 V, R
L
= 1 kΩ
Transition frequency
fT
VCB = −10 V, IE = 1 mA, f = 200 MHz
80
MHz
UNR5116
VCB = −10 V, IE = 2 mA, f = 200 MHz
150
Input
UNR5118
R1
−30%
0.51
+30%
k
Ω
resistance
UNR5119
1.0
UNR511H/511M/511V
2.2
UNR5116/511F/511L
4.7
511N/511Z
UNR5111/5114/5115
10
UNR5112/5117/511T
22
UNR5110/5113/511D/511E
47
Resistance
UNR511M
R1/R2
0.047
ratio
UNR511N
0.1
UNR5118/5119
0.08
0.10
0.12
UNR511Z
0.21



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