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ACE5807B Datasheet(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE5807B Datasheet(HTML) 1 Page - ACE Technology Co., LTD. |
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1 / 6 page  ACE5807B P-Channel Enhancement Mode Field Effect Transistor VER 1.2 1 Description The ACE5807B combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Standard Product ACE5807B is Pb-free. Features VDS (V) = -12V ID= -16A RDS(ON) < 18m Ω (V GS = -4.5V) < 22 mΩ (V GS = -2.5V) DFN2x2-6L Package Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS -12 V Gate-Source Voltage VGSS ±10 V Drain Current (Continuous) TA=25℃ ID -16 A TA=70℃ -13 Drain Current (Pulsed) IDM -65 A Power Dissipation TA=25℃ PD 18 W TA=70℃ 9 Operating temperature / storage temperature TJ/TSTG -55~150 ℃ Packaging Type DFN2*2-6L Ordering information ACE5807B XX + H MN: DFN2*2-6L Pb - free Halogen - free |
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