ACE7203B datasheet(1/6 Pages) ACE

Part #	ACE7203B

Description	P-Channel Enhancement Mode Power MOSFET

PDF	6 Pages

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Manufacturer	ACE [ACE Technology Co., LTD.]

Direct Link	http://www.ace-ele.com

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ACE7203B

P-Channel Enhancement Mode Power MOSFET

VER 1.1

1

Description

ACE7203B uses advanced trench technology and design to provide excellent RDS(ON) with low gate

charge. It can be used in a wide variety of applications.

Features



VDS=-20V, ID=-95A



RDS(ON)1@VGS=-10V, TYP 1.7mΩ



RDS(ON)1@VGS=-4.5V, TYP 2.0mΩ



RDS(ON)1@VGS=-4.5V, TYP 2.7mΩ

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDSS

-20

V

Gate-Source Voltage

VGSS

±12

V

Drain Current (Continuous)*AC

TA=25℃

ID

-95

A

TA=100℃

-60

Drain Current (Pulsed)*B

IDM

-200

A

Power Dissipation

TA=25℃

PD

45

W

Operating temperature / storage temperature

TJ/TSTG

-55~150

℃

A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with

TA=25°C. The value in any given application depends on the user's specific board design.

B: Repetitive rating, pulse width limited by junction temperature.

C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

Packaging Type

DFN5*6-EP

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ACE7203B Datasheet(PDF) 1 Page - ACE Technology Co., LTD.

ACE7203B Datasheet(HTML) 1 Page - ACE Technology Co., LTD.

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