ACE14409T datasheet(2/7 Pages) ACE

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ACE14409T

P-Channel Enhancement Mode Field Effect Transistor

VER 1.2

Ordering information

ACE14409T XX + H

Electrical Characteristics

TA=25

OC unless otherwise noted

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V, ID=-250uA

-30

Zero Gate Voltage Drain Current

IDSS

VDS=-30V, VGS=0V

-1

Gate Threshold Voltage

VGS(th)

VDS=VGS, IDS=-250µA

-1

-1.5

-3

Gate Leakage Current

IGSS

VGS=±20V, VDS=0V

±100

Static Drain-Source On-Resistance

RDS(ON)

VGS=-10V, ID=-10A

VGS=-4.5V, ID=-7A

Forward Transconductance

gFS

VGS=-10V, ID=-10A

Diode Forward Voltage

VSD

ISD=-2A, VGS=0V

-1.2

Switching

Total Gate Charge

VGS=-10V,VDS=-15V,

ID=-10A,

Gate-Source Charge

Qgs

3.5

Gate-Drain Charge

Qgd

Turn-On Delay Time

Td(on)

VGS=-10V,VDS=-15V,

ID=-10A ,RGEN=1Ω

Turn-On Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

Dynamic

Input Capacitance

Ciss

VGS=0V,VDS=-15V,

f=1MHz

1750

Output Capacitance

Coss

215

Reverse Transfer Capacitance

Crss

180

FM: SOP-8

Pb - free

Halogen - free

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