@ 64V, +150°C Junction

@ 10 Amps

@10Amps, +150°C Junction

@ 10 Amps, 150°C Junction

@ 10 Amps, Each FET

IF=10 Amps, di/dt=100A/µS

Typ.

60

16

16

2

0.5

±5.0

-

±12

8

±13

6.5

275

POWER SUPPLY REQUIREMENTS

+Vcc

-Vcc

PWM

Free Running Frequency

CONTROL

Transconductance

Current Monitor

ERROR AMP

Input Voltage Range

Slew Rate

Output Voltage Swing

Gain Bandwidth Product

Large Signal Voltage Gain

75V

±13.5V

+16V

-18V

10A

20A

High Voltage Supply

Current Command Input

Continuous Output Current

Peak Output Current

@ +15V

@ -15V

±8 Amps Output

±8 Amps Output

mA

mA

KHz

Amp/Volt

V/Amp

mAmp

mAmp

Volts

V/µSec

Volts

MHz

V/mV

ABSOLUTE MAXIMUM RATINGS

V+

+Vcc

-Vcc

3.1°C/W

-65°C to +150°C

+300°C

-55°C to +125°C

+150°C

Parameter

ELECTRICAL SPECIFICATIONS

Units

Max.

85

35

19

2.2

0.55

±35.0

-

-

-

-

-

-

MSK 4250

Typ.

60

16

16

2

0.5

±5.0

-

±12

8

±13

6.5

275

Test Conditions

Min.

-

-

14

1.8

0.45

-

-

±11

6.5

±12

-

175

Thermal Resistance

Storage Temperature Range

Lead Temperature Range

(10 Seconds)

Case Operating Temperature

Junction Temperature

All Ratings: Tc=+25°C Unless Otherwise Specified

2

PRELIMINARY Rev. - 11/00

Max.

85

35

18

2.1

0.55

±25.0

±50.0

-

-

-

-

-

MSK 4250H

Min.

-

-

15

1.9

0.45

-

-

±11

6.5

±12

-

175

1,2,3

1,2,3

4,5,6

4,5,6

4,5,6

4

5,6

-

-

-

-

-

-

-

-

-

-

-

-

-

-

NOTES:

1

Guaranteed by design but not tested. Typical parameters are representative of actual device

performance but are for reference only.

2

Industrial grade devices shall be tested to subgroups 1 and 4 unless otherwise specified.

3

Military grade devices ("H" Suffix) shall be 100% tested to Subgroups 1, 2, 3 and 4.

4

Subgroups 5 and 6 testing available upon request.

5

6

This is to be used for MOSFET thermal calculation only.

7

Measurements do not include offset current at 0V current command.

3

2

nSec

nSec

µAmps

Volts

Volts

Ω

Volts

nSec

µSec

OUTPUT

Rise Time

Fall Time

Leakage Current

Voltage Drop Across Bridge (1 Upper and 1 Lower)

Voltage Drop Across Bridge (1 Upper and 1 Lower)

Drain-Source On Resistance (Each MOSFET)

Diode VSD

trr

Dead Time

-

-

750

0.3

0.6

0.026

2.6

-

-

100

100

-

-

-

-

-

280

2

-

-

-

-

-

-

-

-

-

100

100

-

-

-

-

-

280

2

-

-

-

-

-

-

-

-

-

-

-

750

0.3

0.6

0.026

2.6

-

-

7

Group A

5

Subgroup

4

7

6

1

1

1

1

1

1

1

1

1

1

1

1

@ 0 Volts Command

Output Offset

1