SYMBOLS

PARAMETERS

UNITS

RATINGS

Drain to Source Voltage

V

4.0

Gate to Source Voltage

V

-3.0

Drain Current

mA

Gate Current

µA

280

RF Input (CW)

dBm

15

Channel Temperature

°C

175

Storage Temperature

°C

-65 to +175

Total Power Dissipation

mW

240

TOTAL POWER DISSIPATION vs.

AMBIENT TEMPERATURE

°C)

FREQ.

(GHz)

(dB)

(dB)

MAG

ANG

Rn/50

1

0.29

21.3

0.82

8

0.39

2

0.31

18.3

0.81

17

0.36

4

0.35

15.3

0.76

41

0.33

6

0.42

13.5

0.71

63

0.30

8

0.52

12.2

0.64

77

0.27

10

0.63

11.3

0.55

95

0.24

12

0.75

10.5

0.48

112

0.22

14

0.9

9.9

0.41

130

0.19

16

1.05

9.3

0.37

144

0.18

18

1.25

8.8

0.35

164

0.15

20

1.5

8.3

0.37

180

0.13

22

1.8

7.9

0.38

-166

0.11

24

2.2

7.6

0.39

-154

0.10

26

2.6

7.3

0.40

-142

0.08

Note:

1.Operation in excess of any one of these parameters may result in

permanent damage.

2.With chip mounted on infinite heat sink.

NOISE FIGURE and GAIN

vs. DRAIN CURRENT

Note:

1.Noise Parameters include Bond Wires:

Gate:

Total 2 wires, 1 per bond pad 0.0129" (327

µm)

long each wire.

Drain:

Total 2 wires, 1 per bond pad 0.0118" (300

µm)

long each wire.

Source: Total 4 wires, 2 per side, 0.0071" (180

µm)

long each wire.

Wire:

0.0007" (17.8

µm) dia. gold.

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

TRANSCONDUCTANCE vs. DRAIN CURRENT

NE33200

0

0

50

100

150

200

250

50

100 117

150

200

250

Mounted on

Infinite

Heat sink

2.0

1.6

1.2

0.8

0.4

0

0

5

10

15

20

25

30

35

40

6

8

10

12

14

16

Tuned at 10 mA only

50

40

30

20

10

0

0

0.5

-0.1 V

-0.2 V

-0.3 V

-0.4 V

-0.5 V

1

1.5

2

2.5

3

120

100

80

60

40

20

0

0

10

20

304050