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AP3C010M Datasheet(PDF) 2 Page - Advanced Power Electronics Corp.

Part # AP3C010M
Description  N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  10 Pages
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Manufacturer  A-POWER [Advanced Power Electronics Corp.]
Direct Link  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

AP3C010M Datasheet(HTML) 2 Page - Advanced Power Electronics Corp.

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N-CH Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
-
V
VGS=10V, ID=9A
-
-
13.5
mΩ
VGS=4.5V, ID=5A
-
-
21
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=5V, ID=9A
-
27
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=5A
-
17
27.2
nC
Qgs
Gate-Source Charge
VDS=15V
-
5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
6.5
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
10
-
ns
tr
Rise Time
ID=1A
-
9
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-29
-
ns
tf
Fall Time
VGS=10V
-
7
-
ns
Ciss
Input Capacitance
VGS=0V
-
1750 2800
pF
Coss
Output Capacitance
VDS=25V
-
150
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
120
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
VSD
Forward On Voltage
2
IS=1.5A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
IS=9A, VGS=0V
-
13
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
4.5
-
nC
2
AP3C010M
RDS(ON)
Static Drain-Source On-Resistance
2
.



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